IRLU3705ZPBF International Rectifier, IRLU3705ZPBF Datasheet - Page 3

• Manufacturer Part Number: IRLU3705ZPBF
• Description: MOSFET N-CH 55V 42A I-PAK
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRLU3705ZPBF

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 8 mOhm @ 42A, 10V
• Drain To Source Voltage (vdss): 55V
• Current - Continuous Drain (id) @ 25° C: 42A
• Vgs(th) (max) @ Id: 3V @ 250µA
• Gate Charge (qg) @ Vgs: 66nC @ 5V
• Input Capacitance (ciss) @ Vds: 2900pF @ 25V
• Power - Max: 130W
• Mounting Type: Through Hole
• Package / Case: IPak, TO-251, DPak, VPak (3 straight leads + tab)
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 12 mOhms
• Drain-source Breakdown Voltage: 55 V
• Gate-source Breakdown Voltage: 16 V
• Continuous Drain Current: 89 A
• Power Dissipation: 130 W
• Mounting Style: SMD/SMT
• Gate Charge Qg: 44 nC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: *IRLU3705ZPBF

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1000.0
100.0
1000
Fig 3. Typical Transfer Characteristics
10.0
Fig 1. Typical Output Characteristics
100
1.0
10
1
1.0
0.1
2.0
V DS , Drain-to-Source Voltage (V)
V GS , Gate-to-Source Voltage (V)
3.0
4.0
1
2.8V
T J = 25°C
V DS = 15V
5.0
60µs PULSE WIDTH
Tj = 25°C
60µs PULSE WIDTH
6.0
7.0
10
TOP
BOTTOM
T J = 175°C
8.0
9.0 10.0
VGS
12V
10V
8.0V
5.0V
4.5V
3.5V
3.0V
2.8V
100
Fig 4. Typical Forward Transconductance
Fig 2. Typical Output Characteristics
100
1000
80
60
40
20
100
10
0
1
0.1
0
TOP
BOTTOM
10
V DS , Drain-to-Source Voltage (V)
I D, Drain-to-Source Current (A)
vs. Drain Current
20
VGS
12V
10V
8.0V
5.0V
4.5V
3.5V
3.0V
2.8V
1
30
V DS = 8.0V
380µs PULSE WIDTH
2.8V
40
Tj = 175°C
60µs PULSE WIDTH
50
T J = 25°C
T J = 175°C
10
60
70
3
80
100