IRLH5030TR2PBF International Rectifier, IRLH5030TR2PBF Datasheet

MOSFET N-CH 100V 13A 8VQFN

IRLH5030TR2PBF

Manufacturer Part Number
IRLH5030TR2PBF
Description
MOSFET N-CH 100V 13A 8VQFN
Manufacturer
International Rectifier
Series
HEXFET®r
Type
Power MOSFETr
Datasheet

Specifications of IRLH5030TR2PBF

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
9 mOhm @ 50A, 10V
Drain To Source Voltage (vdss)
100V
Current - Continuous Drain (id) @ 25° C
13A
Vgs(th) (max) @ Id
2.5V @ 150µA
Gate Charge (qg) @ Vgs
94nC @ 10V
Input Capacitance (ciss) @ Vds
5185pF @ 50V
Power - Max
3.6W
Mounting Type
Surface Mount
Package / Case
8-VQFN
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
9.9 mOhms
Drain-source Breakdown Voltage
100 V
Gate-source Breakdown Voltage
16 V
Continuous Drain Current
13 A
Power Dissipation
3.6 W
Gate Charge Qg
44 nC
Number Of Elements
1
Polarity
N
Channel Mode
Enhancement
Drain-source On-res
0.009Ohm
Drain-source On-volt
100V
Gate-source Voltage (max)
±16V
Operating Temp Range
-55C to 150C
Operating Temperature Classification
Military
Mounting
Surface Mount
Pin Count
8
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
IRLH5030TR2PBFTR

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IRLH5030TR2PBF
Manufacturer:
SHARP
Quantity:
6 342
Applications
Features and Benefits
www.irf.com
Features
Notes  through
Orderable part number
IRLH5030TRPBF
IRLH5030TR2PBF
Low R
Low Thermal Resistance to PCB (≤ 0.5°C/W)
100% Rg tested
Low Profile (≤ 0.9 mm)
Industry-Standard Pinout
Compatible with Existing Surface Mount Techniques
RoHS Compliant Containing no Lead, no Bromide and no Halogen
MSL1, Industrial Qualification
V
V
I
I
I
I
I
P
P
T
T
Absolute Maximum Ratings
D
D
D
D
DM
J
STG
DS
GS
D
D
Secondary Side Synchronous Rectification
Inverters for DC Motors
DC-DC Brick Applications
Boost Converters
@ T
@ T
@ T
@ T
@T
@ T
A
A
C(Bottom)
C(Bottom)
A
(@T
DSon
C(Bottom)
= 25°C
= 70°C
= 25°C
(@V
R
R
Q
(≤9.0mΩ)
c(Bottom)
DS(on) max
G (typical)
g (typical)
= 25°C
= 100°C
GS
= 25°C
V
I
DS
D
= 4.5V)
= 25°C)
are on page 8
Drain-to-Source Voltage
Gate-to-Source Voltage
Continuous Drain Current, V
Continuous Drain Current, V
Continuous Drain Current, V
Continuous Drain Current, V
Pulsed Drain Current c
Power Dissipation g
Power Dissipation g
Linear Derating Factor g
Operating Junction and
Storage Temperature Range
PQFN 5mm x 6mm
PQFN 5mm x 6mm
Package Type
100h
100
9.9
1.2
44
Parameter
mΩ
nC
A
V
GS
GS
GS
GS
@ 10V
@ 10V
@ 10V h
@ 10V
Tape and Reel
Tape and Reel
Form
Standard Pack
results in Increased Power Density
IRLH5030PbF
Benefits
Increased Reliability
Lower Conduction Losses
Enable better thermal dissipation
Multi-Vendor Compatibility
Easier Manufacturing
Environmentally Friendlier
Increased Reliability
HEXFET
Quantity
-55 to + 150
4000
1000
0.029
Max.
100
100
400
250
±16
3.6
13
11
70
®
PQFN 5X6 mm
Power MOSFET
Note
01/08/2010
Units
W/°C
°C
W
V
A
1

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IRLH5030TR2PBF Summary of contents

Page 1

... Low Profile (≤ 0.9 mm) Industry-Standard Pinout Compatible with Existing Surface Mount Techniques RoHS Compliant Containing no Lead, no Bromide and no Halogen MSL1, Industrial Qualification Orderable part number IRLH5030TRPBF PQFN 5mm x 6mm IRLH5030TR2PBF PQFN 5mm x 6mm Absolute Maximum Ratings V Drain-to-Source Voltage DS V Gate-to-Source Voltage ...

Page 2

Static @ T = 25°C (unless otherwise specified) J Parameter BV Drain-to-Source Breakdown Voltage DSS ∆ΒV /∆T Breakdown Voltage Temp. Coefficient DSS J R Static Drain-to-Source On-Resistance DS(on) V Gate Threshold Voltage GS(th) ∆V Gate Threshold Voltage Coefficient GS(th) I ...

Page 3

VGS TOP 10V 5.0V 4.5V 3.5V 3.3V 3.0V 2.9V BOTTOM 2.7V 100 2. Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics 1000 100 25° 25V ...

Page 4

150°C 100 10 1 0.1 0.0 0.2 0.4 0 Source-to-Drain Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage 120 Limited By Package 100 ...

Page 5

V GS, Gate -to -Source Voltage (V) Fig 12. On-Resistance vs. Gate Voltage D.U 20V 0.01 Ω Fig 14a. Unclamped Inductive ...

Page 6

D.U.T + ƒ • • - • + ‚ -  • • • SD • Fig 16. DUT Fig 17. Gate Charge Test Circuit 6 Driver Gate Drive P.W. D.U.T. I Waveform SD Reverse Recovery „ ...

Page 7

PQFN 5x6 Outline "B" Package Details For footprint and stencil design recommendations, please refer to application note AN-1154 at http://www.irf.com/technical-info/appnotes/an-1154.pdf PQFN 5x6 Outline "B" Part Marking DATE CODE ASSEMBLY SITE CODE (Per SCOP 200-002) IDENTIFIER Note: For the most current ...

Page 8

... Qualification standards can be found at International Rectifier’s web site http://www.irf.com/product-info/reliability †† Higher qualification ratings may be available should the user have such requirements. Please contact your International Rectifier sales representative for further information: http://www.irf.com/whoto-call/salesrep/ ††† Applicable version of JEDEC standard at the time of product release. ...

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