IRF6612 International Rectifier, IRF6612 Datasheet - Page 8

• Manufacturer Part Number: IRF6612
• Description: MOSFET N-CH 30V 24A DIRECTFET
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRF6612

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 3.3 mOhm @ 24A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 24A
• Vgs(th) (max) @ Id: 2.25V @ 250µA
• Gate Charge (qg) @ Vgs: 45nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 3970pF @ 15V
• Power - Max: 2.8W
• Mounting Type: Surface Mount
• Package / Case: DirectFET™ Isometric MX
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: IRF6612TR

8
™
CODE
A
B
C
D
E
F
G
H
J
K
L
M
N
P
1.38
MIN
6.25
4.80
3.85
0.35
0.68
0.68
0.80
0.38
0.88
2.28
0.59
0.03
0.08
METRIC
DIMENSIONS
1.42
1.01
MAX
6.35
5.05
3.95
0.45
0.72
0.72
0.84
0.42
2.41
0.70
0.08
0.17
0.246
0.189
0.152
0.014
0.027
0.027
0.054
0.032
0.015
0.035
0.090
0.023
0.001
0.003
MIN
IMPERIAL
0.250
0.201
0.156
0.018
0.028
0.028
0.056
0.033
0.017
0.039
0.095
0.028
0.003
0.007
MAX
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