IXTI12N50P IXYS, IXTI12N50P Datasheet - Page 5

• Manufacturer Part Number: IXTI12N50P
• Description: MOSFET N-CH 500V 12A I2-PAK
• Manufacturer: IXYS
• Series: Polar™r

Specifications of IXTI12N50P

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 500 mOhm @ 500mA, 10V
• Drain To Source Voltage (vdss): 500V
• Current - Continuous Drain (id) @ 25° C: 12A
• Vgs(th) (max) @ Id: 5.5V @ 250µA
• Gate Charge (qg) @ Vgs: 29nC @ 10V
• Input Capacitance (ciss) @ Vds: 1830pF @ 25V
• Power - Max: 200W
• Mounting Type: Through Hole
• Package / Case: I²Pak, TO-262 (3 straight leads + tab)
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.5 Ohms
• Forward Transconductance Gfs (max / Min): 13 s
• Drain-source Breakdown Voltage: 500 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 12 A
• Power Dissipation: 200 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

IXTA12N50P IXTI12N50P
IXTP12N50P
Fig. 13. Maximum Transient Thermal Impedance
1.00
0.10
0.01
0.01
0.1
1
10
100
1000
Pulse Width - milliseconds
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IXYS REF: T_12N50P (4J) 04-14-08-D