IXTP140N055T2 IXYS, IXTP140N055T2 Datasheet - Page 4

• Manufacturer Part Number: IXTP140N055T2
• Description: MOSFET N-CH 55V 140A TO-220
• Manufacturer: IXYS
• Series: TrenchT2™r

Specifications of IXTP140N055T2

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 5.4 mOhm @ 50A, 10V
• Drain To Source Voltage (vdss): 55V
• Current - Continuous Drain (id) @ 25° C: 140A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 82nC @ 10V
• Input Capacitance (ciss) @ Vds: 4760pF @ 25V
• Power - Max: 250W
• Mounting Type: Through Hole
• Package / Case: TO-220
• Vdss, Max, (v): 55
• Id(cont), Tc=25°c, (a): 140
• Rds(on), Max, Tj=25°c, (?): 0.0054
• Ciss, Typ, (pf): 4760
• Qg, Typ, (nc): 82
• Trr, Typ, (ns): 40
• Pd, (w): 250
• Rthjc, Max, (k/w): 0.60
• Package Style: TO-220
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

IXYS reserves the right to change limits, test conditions, and dimensions.
10,000
1,000
350
300
250
200
150
100
180
160
140
120
100
100
50
80
60
40
20
10
0
0
0.4
3.0
0
0.5
f
= 1MHz
3.5
5
0.6
T
Fig. 9. Forward Voltage Drop of
J
= 150ºC
0.7
4.0
10
Fig. 7. Input Admittance
0.8
Fig. 11. Capacitance
T
Intrinsic Diode
J
4.5
0.9
15
= 150ºC
V
GS
- 40ºC
V
V
25ºC
SD
1.0
DS
T
- Volts
J
5.0
- Volts
20
- Volts
= 25ºC
1.1
1.2
5.5
25
C rss
C oss
C iss
1.3
6.0
30
1.4
1.5
6.5
35
1.6
1.7
7.0
40
1000
100
100
10
10
1
90
80
70
60
50
40
30
20
10
9
8
7
6
5
4
3
2
1
0
0
1
0
0
R
DS(on)
Lead Limit
Fig. 12. Forward-Bias Safe Operating Area
T
T
Single Pulse
V
I
I
D
G
J
C
DS
10
20
= 70A
= 10mA
= 175ºC
= 25ºC
= 28V
Limit
40
20
Fig. 8. Transconductance
Fig. 10. Gate Charge
60
30
Q
G
T
80
- NanoCoulombs
J
I
V
D
= - 40ºC
40
DS
- Amperes
100
10
- Volts
25ºC
150ºC
50
IXTA140N055T2
IXTP140N055T2
120
60
140
IXYS REF: T_140N055T2(V4)10-27-08-A
70
DC
160
80
180
25µs
100µs
1ms
10ms
100ms
200
100
90