IRF640NSPBF International Rectifier, IRF640NSPBF Datasheet

IRF640NSPBF

Manufacturer Part Number

IRF640NSPBF

Description

MOSFET N-CH 200V 18A D2PAK

Manufacturer

International Rectifier

Series

HEXFET®r

Datasheets

1.IRF640NSTRLPBF.pdf (11 pages)

2.IRF640NSPBF.pdf (4 pages)

Specifications of IRF640NSPBF

Fet Type

MOSFET N-Channel, Metal Oxide

Fet Feature

Standard

Rds On (max) @ Id, Vgs

150 mOhm @ 11A, 10V

Drain To Source Voltage (vdss)

200V

Current - Continuous Drain (id) @ 25° C

18A

Vgs(th) (max) @ Id

4V @ 250µA

Gate Charge (qg) @ Vgs

67nC @ 10V

Input Capacitance (ciss) @ Vds

1160pF @ 25V

Power - Max

150W

Mounting Type

Surface Mount

Package / Case

D²Pak, TO-263 (2 leads + tab)

Channel Type

Current, Drain

18 A

Gate Charge, Total

67 nC

Package Type

D2Pak

Polarization

N-Channel

Power Dissipation

150 W

Resistance, Drain To Source On

0.15 Ohm

Resistance, Thermal, Junction To Case

1 °C/W

Temperature, Operating, Maximum

+175 °C

Temperature, Operating, Minimum

-55 °C

Time, Turn-off Delay

23 ns

Time, Turn-on Delay

10 ns

Transconductance, Forward

6.8 S

Voltage, Breakdown, Drain To Source

200 V

Voltage, Drain To Source

200 V

Voltage, Forward, Diode

1.3 V

Voltage, Gate To Source

±20 V

Lead Free Status / RoHS Status

Lead free / RoHS Compliant

Other names

*IRF640NSPBF

Available stocks

Company

Part Number

Manufacturer

Quantity

Price

Company:

Bonase Electronics (HK) Co., Limited

Part Number:

IRF640NSPBF

Manufacturer:

InfineonTech

Quantity:

940

Company:

Meier Automation Equipment Co., Limited

Part Number:

IRF640NSPBF

Manufacturer:

Quantity:

20 000

Company:

Euro Chip Distribution

Part Number:

IRF640NSPBF

Quantity:

180

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Description

Fifth Generation HEXFET

International Rectifier utilize advanced processing

techniques to achieve extremely low on-resistance per

silicon area. This benefit, combined with the fast switching

speed and ruggedized device design that HEXFET Power

MOSFETs are well known for, provides the designer with an

extremely efficient and reliable device for use in a wide

variety of applications.

The TO-220 package is universally preferred for all

commercial-industrial applications at power dissipation levels

to approximately 50 watts. The low thermal resistance and

low package cost of the TO-220 contribute to its wide

acceptance throughout the industry.

The D

accommodating die sizes up to HEX-4. It provides the

highest power capability and the lowest possible on-

resistance in any existing surface mount package. The

low internal connection resistance and can dissipate up to

2.0W in a typical surface mount application.

The through-hole version (IRF640NL) is available for low-

profile application.

Absolute Maximum Ratings

www.irf.com

dv/dt

STG

Pak is suitable for high current applications because of its

@ T

Advanced Process Technology

Dynamic dv/dt Rating

175°C Operating Temperature

Fast Switching

Fully Avalanche Rated

Ease of Paralleling

Simple Drive Requirements

Lead-Free

Pak is a surface mount power package capable of

= 25°C

= 100°C

= 25°C

Continuous Drain Current, V

Pulsed Drain Current

Power Dissipation

Linear Derating Factor

Gate-to-Source Voltage

Single Pulse Avalanche Energy

Avalanche Current

Repetitive Avalanche Energy

Peak Diode Recovery dv/dt

Operating Junction and

Storage Temperature Range

Soldering Temperature, for 10 seconds

Mounting torque, 6-32 or M3 srew

Power MOSFETs from

Parameter

†

@ 10V

‚

„

IRF640NPbF

TO-220AB

300 (1.6mm from case )

HEXFET

10 lbf•in (1.1N•m)

-55 to +175

IRF640NSPbF

Max.

150

± 20

247

1.0

8.1

Pak

IRF640NSPbF

IRF640NLPbF

Power MOSFET

DS(on)

IRF640NPbF

DSS

= 18A

PD - 95046A

IRF640NLPbF

= 200V

= 0.15Ω

TO-262

Units

W/°C

V/ns

°C

07/23/10

Related parts for IRF640NSPBF

IRF640NSPBF Summary of contents

Page 1

... PD - 95046A IRF640NPbF IRF640NSPbF IRF640NLPbF ® HEXFET Power MOSFET 200V DSS R = 0.15Ω DS(on 18A Pak TO-262 IRF640NSPbF IRF640NLPbF Max. Units 150 W 1.0 W/°C ± 247 8.1 V/ns -55 to +175 °C 10 lbf•in (1.1N•m) 1 ...

Page 2

IRF640N/S/LPbF Electrical Characteristics @ T Parameter V Drain-to-Source Breakdown Voltage (BR)DSS Breakdown Voltage Temp. Coefficient ∆V /∆T (BR)DSS J R Static Drain-to-Source On-Resistance DS(on) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-to-Source Leakage Current DSS Gate-to-Source Forward ...

Page 3

VGS TOP 15V 10V 8.0V 7.0V 6.0V 5.5V 10 5.0V BOTTOM 4.5V 1 0.1 20µs PULSE WIDTH 0.01 0 Drain-to-Source Voltage (V) DS 100 ° 175 C J ...

Page 4

IRF640N/S/LPbF 2500 0V MHZ C iss = SHORTED C rss = C gd 2000 C oss = 1500 Ciss 1000 Coss ...

Page 5

T , Case Temperature ( Case Temperature ( ...

Page 6

IRF640N/S/LPbF D.U 20V 0.01 Ω Charge www.irf.com 600 15V 500 DRIVER 400 + - V DD 300 A 200 ...

Page 7

D.U.T + ‚ - Driver Gate Drive P.W. D.U.T. I Waveform SD Reverse Recovery Current D.U.T. V Waveform DS Re-Applied Voltage Inductor Curent For N-Channel HEXFET www.irf.com + • • ƒ • - „ • • • ...

Page 8

IRF640N/S/LPbF EXAMPLE: T HIS IS AN IRF1010 LOT CODE 1789 AS S EMBLED ON WW 19, 2000 EMBLY LINE "C" Note: "P" embly line pos ition indicates "Lead - Free" TO-220AB package ...

Page 9

T HIS IS AN IRF530S WIT H LOT CODE 8024 ASS EMBLED ON WW 02, 2000 SEMBLY LINE "L" OR Notes: 1. For an Automotive Qualified version of this part please see http://www.irf.com/product-info/auto/ 2. ...

Page 10

IRF640N/S/LPbF TO-262 Package Outline Dimensions are shown in millimeters (inches) TO-262 Part Marking Information EXAMPLE: THIS IS AN IRL3103L LOT CODE 1789 ASS EMBLED ON WW 19, 1997 ASSEMBLY LINE "C" Note: "P" in assembly line position ...

Page 11

D Pak Tape & Reel Infomation Dimensions are shown in millimeters (inches) TRR FEED DIRECTION 1.85 (.073) 1.65 (.065) TRL FEED DIRECTION 330.00 (14.173) MAX. NOTES : 1. COMFORMS TO EIA-418. 2. CONTROLLING DIMENSION: MILLIMETER. 3. DIMENSION MEASURED @ ...

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