IRFI1010NPBF International Rectifier, IRFI1010NPBF Datasheet - Page 7

• Manufacturer Part Number: IRFI1010NPBF
• Description: MOSFET N-CH 55V 49A TO220FP
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRFI1010NPBF

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 12 mOhm @ 26A, 10V
• Drain To Source Voltage (vdss): 55V
• Current - Continuous Drain (id) @ 25° C: 49A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 130nC @ 10V
• Input Capacitance (ciss) @ Vds: 2900pF @ 25V
• Power - Max: 58W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 Full Pack (Straight Leads)
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 55 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 44 A
• Power Dissipation: 47 W
• Mounting Style: Through Hole
• Gate Charge Qg: 86.7 nC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: *IRFI1010NPBF

Re-Applied
Voltage
Reverse
Recovery
Current

‚
+
-
Driver Gate Drive
D.U.T. I
D.U.T. V
Inductor Curent
P.W.
SD
DS
Waveform
Waveform
Ripple ≤ 5%
Body Diode
Period
Body Diode Forward
+
-
ƒ
•
•
•
•
Diode Recovery
Current
dv/dt
Forward Drop
•
•
•
di/dt
D =
-
Period
„
P.W.
+
V
V
I
SD
GS
DD
=10V
+
-