IRF9540NSPBF International Rectifier, IRF9540NSPBF Datasheet - Page 2

• Manufacturer Part Number: IRF9540NSPBF
• Description: MOSFET P-CH 100V 23A D2PAK
• Manufacturer: International Rectifier
• Series: HEXFET®r
• Type: Power MOSFETr

Specifications of IRF9540NSPBF

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 117 mOhm @ 14A, 10V
• Drain To Source Voltage (vdss): 100V
• Current - Continuous Drain (id) @ 25° C: 23A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 110nC @ 10V
• Input Capacitance (ciss) @ Vds: 1450pF @ 25V
• Power - Max: 3.1W
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Channel Type: P
• Current, Drain: -23 A
• Gate Charge, Total: 97 nC
• Package Type: D2Pak
• Polarization: P-Channel
• Power Dissipation: 140 W
• Resistance, Drain To Source On: 0.117 Ohm
• Temperature, Operating, Maximum: +175 °C
• Temperature, Operating, Minimum: -55 °C
• Time, Turn-off Delay: 51 ns
• Time, Turn-on Delay: 15 ns
• Transconductance, Forward: 5.3 S
• Voltage, Breakdown, Drain To Source: -100 V
• Voltage, Drain To Source: –100 V
• Voltage, Forward, Diode: -1.6 V
• Voltage, Gate To Source: ±20 V
• Number Of Elements: 1
• Polarity: P
• Channel Mode: Enhancement
• Drain-source On-res: 0.117Ohm
• Drain-source On-volt: 100V
• Gate-source Voltage (max): ±20V
• Continuous Drain Current: 23A
• Output Power (max): Not RequiredW
• Frequency (max): Not RequiredMHz
• Noise Figure: Not RequireddB
• Power Gain: Not RequireddB
• Drain Efficiency: Not Required%
• Operating Temp Range: -55C to 175C
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Pin Count: 2 +Tab
• Configuration: Single
• Transistor Polarity: P-Channel
• Resistance Drain-source Rds (on): 117 m Ohms
• Drain-source Breakdown Voltage: - 100 V
• Gate-source Breakdown Voltage: 20 V
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Fall Time: 51 ns
• Gate Charge Qg: 64.7 nC
• Minimum Operating Temperature: - 55 C
• Rise Time: 67 ns
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Notes:

‚
ƒ
V
∆ΒV
R
V
gfs
I
I
Q
Q
Q
t
t
t
t
L
L
C
C
C
I
I
V
t
Q
t
Electrical Characteristics @ T
Source-Drain Ratings and Characteristics
DSS
GSS
d(on)
r
d(off)
f
S
SM
rr
on
D
S
(BR)DSS
GS(th)
SD
DS(on)
g
gs
gd
iss
oss
rss
rr
I
2
SD
DSS
≤
≤
/∆T
Ω
J
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Internal Drain Inductance
Internal Source Inductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn-On Time
≤
Parameter
Parameter
™
≤
J
= 25°C (unless otherwise specified)
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Min. Typ. Max. Units
Min. Typ. Max. Units
-100
-2.0
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
5.6
„
…
-0.11
1450
–––
–––
–––
–––
–––
–––
–––
–––
430
230
–––
–––
–––
140
890
4.5
7.5
73
13
38
13
64
40
45
1340
-250
-100
-4.0
-1.6
–––
–––
117
–––
100
110
–––
–––
–––
–––
–––
–––
–––
–––
–––
210
-50
-23
-92
20
57
≤
V/°C
mΩ
µA
nA
nC
nH
nC
ns
pF
ns
V
V
S
A
V
V
Reference to 25°C, I
V
V
V
V
V
V
V
I
V
V
V
I
R
V
Between lead,
6mm (0.25in.)
from package
and center of die contact
V
V
ƒ = 1.0MHz, See Fig. 5
MOSFET symbol
showing the
integral reverse
p-n junction diode.
T
T
di/dt = -100A/µs
D
D
J
J
GS
GS
DS
DS
DS
DS
GS
GS
DS
GS
DD
GS
GS
DS
G
= -14A
= -14A
= 25°C, I
= 25°C, I
= 5.1Ω
= V
= -50V, I
= -100V, V
= -80V, V
= -80V
= -25V
= 0V, I
= -10V, I
= -20V
= 20V
= -10V
= -50V
= -10V
= 0V
GS
, I
Conditions
D
Conditions
≤
f
f
D
S
F
= -250µA
D
D
= -250µA
= -14A, V
GS
= -14A, V
= -14A
= -14A
GS
= 0V, T
f
= 0V
D
f
= -1mA
DD
GS
J
= 125°C
= -25V
= 0V
f