IRFIB41N15DPBF International Rectifier, IRFIB41N15DPBF Datasheet - Page 2

• Manufacturer Part Number: IRFIB41N15DPBF
• Description: MOSFET N-CH 150V 41A TO220FP
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRFIB41N15DPBF

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 45 mOhm @ 25A, 10V
• Drain To Source Voltage (vdss): 150V
• Current - Continuous Drain (id) @ 25° C: 41A
• Vgs(th) (max) @ Id: 5.5V @ 250µA
• Gate Charge (qg) @ Vgs: 110nC @ 10V
• Input Capacitance (ciss) @ Vds: 2520pF @ 25V
• Power - Max: 48W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 Full Pack (Straight Leads)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: *IRFIB41N15DPBF

IRFB/IRFIB/IRFS/IRFSL41N15DPbF
V
∆V
R
V
I
I
gfs
Q
Q
Q
t
t
t
t
C
C
C
C
C
C
E
I
E
I
I
V
t
Q
t
Static @ T
Dynamic @ T
Avalanche Characteristics
Diode Characteristics
DSS
GSS
d(on)
r
d(off)
f
AR
S
SM
rr
on
(BR)DSS
GS(th)
AS
AR
SD
2
DS(on)
g
gs
gd
iss
oss
rss
oss
oss
oss
rr
(BR)DSS
eff.
/∆T
J
J
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient –––
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Forward Transconductance
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Output Capacitance
Output Capacitance
Effective Output Capacitance
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn-On Time
= 25°C (unless otherwise specified)
J
Parameter
= 25°C (unless otherwise specified)
Parameter
Parameter
Ù
Parameter
Ù
™
d
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Min. Typ. Max. Units
Min. Typ. Max. Units
Min. Typ. Max. Units
150
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
3.0
18
2520
3090
0.17
–––
–––
–––
–––
–––
–––
–––
–––
510
110
230
250
–––
–––
–––
170
1.3
72
21
35
16
63
25
14
0.045
-100
Typ.
–––
–––
250
100
–––
110
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
164
260
5.5
1.3
1.9
25
31
52
41
V/°C Reference to 25°C, I
µA
nA
nC
µC
pF
ns
ns
V
Ω
V
S
A
V
V
V
V
V
V
V
V
V
I
V
V
V
I
R
V
V
V
ƒ = 1.0MHz
V
V
V
MOSFET symbol
showing the
integral reverse
p-n junction diode.
T
T
di/dt = 100A/µs
D
D
GS
GS
DS
DS
DS
GS
GS
DS
DS
GS
DD
GS
GS
DS
GS
GS
GS
J
J
G
= 25A
= 25A
= 25°C, I
= 25°C, I
Conditions
Conditions
Conditions
= 2.5Ω
= V
= 150V, V
= 120V, V
= 50V, I
= 120V
= 25V
= 0V, I
= 10V, I
= 30V
= -30V
= 10V
= 75V
= 10V
= 0V
= 0V, V
= 0V, V
= 0V, V
Max.
GS
470
25
20
, I
D
D
DS
S
F
D
D
DS
DS
= 250µA
= 250µA
= 25A
= 25A, V
= 25A
= 25A
GS
GS
= 0V to 120V
= 1.0V, ƒ = 1.0MHz
= 120V, ƒ = 1.0MHz
= 0V
= 0V, T
www.irf.com
D
= 1mA
GS
J
G
Units
= 0V
= 150°C
mJ
mJ
A
g
S
D