IRFS17N20DTRLP International Rectifier, IRFS17N20DTRLP Datasheet - Page 3

• Manufacturer Part Number: IRFS17N20DTRLP
• Description: MOSFET N-CH 200V 16A D2PAK
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRFS17N20DTRLP

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 170 mOhm @ 9.8A, 10V
• Drain To Source Voltage (vdss): 200V
• Current - Continuous Drain (id) @ 25° C: 16A
• Vgs(th) (max) @ Id: 5.5V @ 250µA
• Gate Charge (qg) @ Vgs: 50nC @ 10V
• Input Capacitance (ciss) @ Vds: 1100pF @ 25V
• Power - Max: 3.8W
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Transistor Polarity: N Channel
• Continuous Drain Current Id: 16A
• Drain Source Voltage Vds: 200V
• On Resistance Rds(on): 170mohm
• Rds(on) Test Voltage Vgs: 10V
• Threshold Voltage Vgs Typ: 5.5V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

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0.01
100
100
0.1
0.1
10
10
Fig 3. Typical Transfer Characteristics
Fig 1. Typical Output Characteristics
1
1
0.1
5.0
TOP
BOTTOM
T = 175 C
J
V
V
DS
VGS
15V
12V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
6.0
GS
, Drain-to-Source Voltage (V)
°
, Gate-to-Source Voltage (V)
T = 25 C
J
1
7.0
°
5.0V
20µs PULSE WIDTH
T = 25 C
V
20µs PULSE WIDTH
8.0
J
DS
10
= 50V
°
9.0
10.0
IRFB/IRFS/IRFSL17N20DPbF
100
100
Fig 2. Typical Output Characteristics
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
10
1
0.1
-60 -40 -20 0
Fig 4. Normalized On-Resistance
TOP
BOTTOM
I =
D
16A
V
DS
VGS
15V
12V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
T , Junction Temperature ( C)
J
Vs. Temperature
, Drain-to-Source Voltage (V)
20 40 60 80 100 120 140 160 180
1
5.0V
20µs PULSE WIDTH
T = 175 C
J
10
°
V
°
GS
=
10V
3
100