IRFZ44ESPBF International Rectifier, IRFZ44ESPBF Datasheet - Page 4

• Manufacturer Part Number: IRFZ44ESPBF
• Description: MOSFET N-CH 60V 48A D2PAK
• Manufacturer: International Rectifier
• Series: HEXFET®r
• Type: Power MOSFETr

Specifications of IRFZ44ESPBF

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 23 mOhm @ 29A, 10V
• Drain To Source Voltage (vdss): 60V
• Current - Continuous Drain (id) @ 25° C: 48A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 60nC @ 10V
• Input Capacitance (ciss) @ Vds: 1360pF @ 25V
• Power - Max: 110W
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Number Of Elements: 1
• Polarity: N
• Channel Mode: Enhancement
• Drain-source On-res: 0.023Ohm
• Drain-source On-volt: 60V
• Gate-source Voltage (max): ±20V
• Continuous Drain Current: 48A
• Power Dissipation: 110W
• Output Power (max): Not RequiredW
• Frequency (max): Not RequiredMHz
• Noise Figure: Not RequireddB
• Power Gain: Not RequireddB
• Drain Efficiency: Not Required%
• Operating Temp Range: -55C to 175C
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Pin Count: 2 +Tab
• Package Type: D2PAK
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: *IRFZ44ESPBF

IRFZ44ES/LPbF
1000
4
100
10
2500
2000
1500
1000
1
500
0.5
0
T = 175 C
J
1
V
C iss
C oss
C rss
SD
V
°
DS
1.0
,Source-to-Drain Voltage (V)
V
C
C
C
, Drain-to-Source Voltage (V)
T = 25 C
GS
iss
rss
oss
J
=
=
=
=
0V,
C
C
C
°
gs
gd
ds
1.5
+ C
+ C
10
f = 1MHz
gd ,
gd
C
ds
2.0
V
SHORTED
GS
= 0 V
2.5
100
1000
100
10
1
20
16
12
1
8
4
0
T
T
Single Pulse
C
J
0
I =
= 25 C
= 175 C
D
OPERATION IN THIS AREA LIMITED
V
29
DS
°
10
°
Q , Total Gate Charge (nC)
, Drain-to-Source Voltage (V)
G
10
20
BY R
DS(on)
30
FOR TEST CIRCUIT
10us
100us
1ms
10ms
V
V
SEE FIGURE
DS
DS
100
40
= 48V
= 30V
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50
13
1000
60