IRF3709PBF International Rectifier, IRF3709PBF Datasheet - Page 6

• Manufacturer Part Number: IRF3709PBF
• Description: MOSFET N-CH 30V 90A TO-220AB
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRF3709PBF

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 9 mOhm @ 15A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 90A
• Vgs(th) (max) @ Id: 3V @ 250µA
• Gate Charge (qg) @ Vgs: 41nC @ 5V
• Input Capacitance (ciss) @ Vds: 2672pF @ 16V
• Power - Max: 3.1W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 10.5 mOhms
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 90 A
• Power Dissipation: 120 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Fall Time: 9.2 ns
• Gate Charge Qg: 27 nC
• Minimum Operating Temperature: - 55 C
• Rise Time: 171 ns
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: *IRF3709PBF

Fig 13a. Basic Gate Charge Waveform
Fig 12a. Unclamped Inductive Test Circuit
V
6
Fig 12b. Unclamped Inductive Waveforms
GS
V
I
G
AS
Q
GS
R G
20V
V DS
t p
Charge
Q
Q
GD
G
t p
I AS
D.U.T
0.01 Ω
L
V
(BR)DSS
15V
DRIVER
+
-
V DD
A
1200
1000
800
600
400
200
0
25
Fig 12c. Maximum Avalanche Energy
Fig 13b. Gate Charge Test Circuit
Starting T , Junction Temperature( C)
12V
V
GS
50
Same Type as D.U.T.
Current Regulator
.2µF
Vs. Drain Current
J
75
50KΩ
3mA
Current Sampling Resistors
.3µF
I
G
100
TOP
BOTTOM
www.irf.com
D.U.T.
I
D
125
+
-
I D
13A
19A
30A
V
°
DS
150