IRF540NSTRRPBF International Rectifier, IRF540NSTRRPBF Datasheet - Page 6

• Manufacturer Part Number: IRF540NSTRRPBF
• Description: MOSFET N-CH 100V 33A D2PAK
• Manufacturer: International Rectifier
• Series: HEXFET®r
• Type: Power MOSFETr

Specifications of IRF540NSTRRPBF

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 44 mOhm @ 16A, 10V
• Drain To Source Voltage (vdss): 100V
• Current - Continuous Drain (id) @ 25° C: 33A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 71nC @ 10V
• Input Capacitance (ciss) @ Vds: 1960pF @ 25V
• Power - Max: 130W
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Number Of Elements: 1
• Polarity: N
• Channel Mode: Enhancement
• Drain-source On-res: 0.044Ohm
• Drain-source On-volt: 100V
• Gate-source Voltage (max): ±20V
• Drain Current (max): 33A
• Power Dissipation: 130W
• Output Power (max): Not RequiredW
• Frequency (max): Not RequiredMHz
• Noise Figure: Not RequireddB
• Power Gain: Not RequireddB
• Drain Efficiency: Not Required%
• Operating Temp Range: -55C to 175C
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Pin Count: 2 +Tab
• Package Type: D2PAK
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 44 m Ohms
• Drain-source Breakdown Voltage: 100 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 33 A
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Fall Time: 35 ns
• Gate Charge Qg: 47.3 nC
• Minimum Operating Temperature: - 55 C
• Rise Time: 35 ns
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

6
GS
V
I
G
AS
Q
GS
R G
20V
V DS
t p
Charge
Q
Q
GD
G
t p
I AS
D.U.T
0.01 Ω
L
V
(BR)DSS
15V
DRIVER
+
-
V DD
A
400
300
200
100
0
25
Starting T , Junction Temperature ( C)
12V
50
V
GS
Same Type as D.U.T.
J
Current Regulator
75
.2µF
50KΩ
3mA
100
Current Sampling Resistors
.3µF
I
G
www.irf.com
125
TOP
BOTTOM
D.U.T.
150
I
D
11.3A
°
6.5A
I D
16A
175
+
-
V
DS