IRF7240PBF International Rectifier, IRF7240PBF Datasheet - Page 4

• Manufacturer Part Number: IRF7240PBF
• Description: MOSFET P-CH 40V 10.5A 8-SOIC
• Manufacturer: International Rectifier
• Series: HEXFET®r
• Type: Power MOSFETr

Specifications of IRF7240PBF

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 15 mOhm @ 10.5A, 10V
• Drain To Source Voltage (vdss): 40V
• Current - Continuous Drain (id) @ 25° C: 10.5A
• Vgs(th) (max) @ Id: 3V @ 250µA
• Gate Charge (qg) @ Vgs: 110nC @ 10V
• Input Capacitance (ciss) @ Vds: 9250pF @ 25V
• Power - Max: 2.5W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Channel Type: P
• Current, Drain: -10.5 A
• Gate Charge, Total: 73 nC
• Package Type: SO-8
• Polarization: P-Channel
• Power Dissipation: 2.5 W
• Resistance, Drain To Source On: 0.025 Ohm
• Temperature, Operating, Maximum: +150 °C
• Temperature, Operating, Minimum: -55 °C
• Time, Turn-off Delay: 210 ns
• Time, Turn-on Delay: 52 ns
• Transconductance, Forward: 17 S
• Voltage, Breakdown, Drain To Source: -40 V
• Voltage, Drain To Source: –40 V
• Voltage, Forward, Diode: -1.2 V
• Voltage, Gate To Source: ±20 V
• Number Of Elements: 1
• Polarity: P
• Channel Mode: Enhancement
• Drain-source On-res: 0.015Ohm
• Drain-source On-volt: 40V
• Gate-source Voltage (max): ±20V
• Drain Current (max): 10.5A
• Output Power (max): Not RequiredW
• Frequency (max): Not RequiredMHz
• Noise Figure: Not RequireddB
• Power Gain: Not RequireddB
• Drain Efficiency: Not Required%
• Operating Temp Range: -55C to 150C
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Pin Count: 8
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

4
16000
12000
8000
4000
100
0.1
10
0
1
Fig 5. Typical Capacitance Vs.
Fig 7. Typical Source-Drain Diode
0.4
1
Coss
Crss
Drain-to-Source Voltage
T = 150 C
Ciss
J
-V
-V DS , Drain-to-Source Voltage (V)
SD
Forward Voltage
0.6
,Source-to-Drain Voltage (V)
°
V GS = 0V,
C iss = C gs + C gd , C ds
C rss = C gd
C oss = C ds + C gd
0.8
10
T = 25 C
J
f = 1 MHZ
°
1.0
V
GS
SHORTED
= 0 V
1.2
100
100
Fig 8. Maximum Safe Operating Area
20
16
12
10
8
4
0
1
0.1
0
Fig 6. Typical Gate Charge Vs.
I =
T
T
Single Pulse
D
A
J
= 25 C
= 150 C
-10.5A
Gate-to-Source Voltage
OPERATION IN THIS AREA LIMITED
-V
DS
20
Q , Total Gate Charge (nC)
°
°
G
, Drain-to-Source Voltage (V)
1
40
BY R
V
V
V
DS
DS
DS
DS(on)
=-32V
=-20V
=-8V
60
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10
80
100us
1ms
10ms
100
100