IRFS4615TRLPBF International Rectifier, IRFS4615TRLPBF Datasheet - Page 4

• Manufacturer Part Number: IRFS4615TRLPBF
• Description: MOSFET N-CH 150V 33A D2PAK
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRFS4615TRLPBF

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 42 mOhm @ 21A, 10V
• Drain To Source Voltage (vdss): 150V
• Current - Continuous Drain (id) @ 25° C: 33A
• Vgs(th) (max) @ Id: 5V @ 100µA
• Gate Charge (qg) @ Vgs: 40nC @ 10V
• Input Capacitance (ciss) @ Vds: 1750pF @ 50V
• Power - Max: 144W
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Transistor Polarity: N Channel
• Continuous Drain Current Id: 33A
• Drain Source Voltage Vds: 150V
• On Resistance Rds(on): 34.5mohm
• Rds(on) Test Voltage Vgs: 10V
• Threshold Voltage Vgs Typ: 5V
• Rohs Compliant: Yes
• Drain-source Breakdown Voltage: 150 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 33 A
• Power Dissipation: 144 W
• Mounting Style: SMD/SMT
• Gate Charge Qg: 26 nC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: IRFS4615TRLPBFTR

4
1000
100
1.0
10
40
35
30
25
20
15
10
Fig 11. Typical C
5
0
0.2
25
3.0
2.5
2.0
1.5
1.0
0.5
0.0
Fig 7. Typical Source-Drain Diode
Fig 9. Maximum Drain Current vs.
-20
T J = 175°C
0.4
V SD , Source-to-Drain Voltage (V)
50
T C , Case Temperature (°C)
0
V DS, Drain-to-Source Voltage (V)
Case Temperature
0.6
Forward Voltage
20
75
0.8
OSS
40
100
T J = 25°C
Stored Energy
60
1.0
125
80 100 120 140 160
1.2
V GS = 0V
150
1.4
1.6
175
Fig 12. Maximum Avalanche Energy vs. DrainCurrent
1000
500
450
400
350
300
250
200
150
100
100
190
185
180
175
170
165
160
155
150
145
140
0.1
50
10
0
1
Fig 10. Drain-to-Source Breakdown Voltage
Fig 8. Maximum Safe Operating Area
-60 -40 -20 0 20 40 60 80 100120140160180
25
1
Tc = 25°C
Tj = 175°C
Single Pulse
Id = 5mA
Starting T J , Junction Temperature (°C)
V DS , Drain-to-Source Voltage (V)
50
T J , Temperature ( °C )
OPERATION IN THIS AREA
LIMITED BY R DS (on)
75
10
10msec
DC
1msec
100µsec
100
TOP
BOTTOM 21A
125
100
150
I D
5.3A
2.8A
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1000
175