IRFR3710ZTRLPBF International Rectifier, IRFR3710ZTRLPBF Datasheet

MOSFET N-CH 100V 42A DPAK

IRFR3710ZTRLPBF

Manufacturer Part Number
IRFR3710ZTRLPBF
Description
MOSFET N-CH 100V 42A DPAK
Manufacturer
International Rectifier
Series
HEXFET®r
Datasheet

Specifications of IRFR3710ZTRLPBF

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
18 mOhm @ 33A, 10V
Drain To Source Voltage (vdss)
100V
Current - Continuous Drain (id) @ 25° C
42A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
100nC @ 10V
Input Capacitance (ciss) @ Vds
2930pF @ 25V
Power - Max
140W
Mounting Type
Surface Mount
Package / Case
DPak, TO-252 (2 leads+tab), SC-63
Transistor Polarity
N Channel
Continuous Drain Current Id
56A
Drain Source Voltage Vds
100V
On Resistance Rds(on)
18mohm
Rds(on) Test Voltage Vgs
10V
Peak Reflow Compatible (260 C)
Yes
Rohs Compliant
Yes
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IRFR3710ZTRLPBF
0
Company:
Part Number:
IRFR3710ZTRLPBF
Quantity:
15 045
HEXFET
Features
Description
This HEXFET
latest processing techniques to achieve extremely
low on-resistance per silicon area. Additional
features of this design are a 175°C junction
operating temperature, fast switching speed and
improved repetitive avalanche rating . These
features combine to make this design an extremely
efficient and reliable device for use in a wide
variety of applications.
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www.irf.com
I
I
I
I
P
V
E
E
I
E
T
T
R
R
R
Absolute Maximum Ratings
Thermal Resistance
D
D
D
DM
AR
J
STG
D
GS
AS (Thermally limited)
AS
AR
JC
JA
JA
@ T
@ T
@ T
@T
Advanced Process Technology
Ultra Low On-Resistance
175°C Operating Temperature
Fast Switching
Repetitive Avalanche Allowed up to Tjmax
Multiple Package Options
Lead-Free
(Tested )
C
C
C
C
= 25°C Continuous Drain Current, V
= 100°C Continuous Drain Current, V
= 25°C Continuous Drain Current, V
= 25°C Power Dissipation
®
is a registered trademark of International Rectifier.
®
Pulsed Drain Current
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Single Pulse Avalanche Energy Tested Value
Avalanche Current
Repetitive Avalanche Energy
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Junction-to-Case
Junction-to-Ambient (PCB mount)
Junction-to-Ambient
Power MOSFET utilizes the
Ã
Parameter
Parameter
GS
GS
GS
g
@ 10V
@ 10V
@ 10V
d
i
(Silicon Limited)
(Package Limited)
h
G
Refer to page 11 for package outline
IRFR3710ZPbF
D-Pak
IRFU3710Z-701PbF
IRFU3710Z-701PbF
I-Pak Leadform 701
See Fig.12a, 12b, 15, 16
Typ.
300 (1.6mm from case )
–––
–––
–––
D
S
-55 to + 175
HEXFET
IRFR3710ZPbF
IRFU3710ZPbF
Max.
0.95
± 20
220
140
150
200
56
39
42
IRFU3710ZPbF
R
V
DS(on)
I-Pak
®
DSS
Max.
I
Power MOSFET
1.05
110
D
50
= 42A
PD - 95513D
= 100V
= 18m
Units
Units
W/°C
°C/W
mJ
mJ
°C
W
A
V
A
1

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IRFR3710ZTRLPBF Summary of contents

Page 1

... Operating Junction and Storage Temperature Range STG Soldering Temperature, for 10 seconds Thermal Resistance R Junction-to-Case JC R Junction-to-Ambient (PCB mount Junction-to-Ambient JA ® HEXFET is a registered trademark of International Rectifier. www.irf.com G IRFR3710ZPbF Refer to page 11 for package outline Parameter @ 10V (Silicon Limited 10V GS @ 10V (Package Limited Parameter i ...

Page 2

Electrical Characteristics @ T Parameter V Drain-to-Source Breakdown Voltage (BR)DSS Breakdown Voltage Temp. Coefficient (BR)DSS J R Static Drain-to-Source On-Resistance DS(on) V Gate Threshold Voltage GS(th) gfs Forward Transconductance I Drain-to-Source Leakage Current DSS I Gate-to-Source Forward ...

Page 3

VGS TOP 15V 10V 6.0V 5.0V 4.8V 4.5V 4.3V BOTTOM 4.0V 100 10 4.0V 60µs PULSE WIDTH Tj = 25° Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics 1000 175°C ...

Page 4

0V MHZ C iss = SHORTED C rss = oss = 10000 C iss 1000 C oss ...

Page 5

Limited By Package 100 125 Case Temperature (°C) Fig 9. Maximum Drain Current vs. Case Temperature 0.50 0.20 0.10 0.1 0.05 0.02 0.01 ...

Page 6

D.U 20V Fig 12a. Unclamped Inductive Test Circuit V (BR)DSS Fig 12b. Unclamped Inductive Waveforms Charge ...

Page 7

Duty Cycle = Single Pulse 100 0.01 10 0.05 0.10 1 0.1 1.0E-06 1.0E-05 Fig 15. Typical Avalanche Current vs.Pulsewidth 200 TOP Single Pulse BOTTOM 1% Duty Cycle 33A 150 100 ...

Page 8

D.U.T + ƒ ‚ -  SD Fig 17. Fig 18a. Switching Time Test Circuit V DS 90% 10 Fig 18b. Switching Time Waveforms 8 Driver Gate Drive P.W. D.U.T. I Waveform SD Reverse Recovery „ ...

Page 9

E XAMP IRF R 120 WIT CODE 1234 16, 2001 ...

Page 10

EXAMPLE: T HIS IS AN IRFU120 WIT H AS SEMBLY LOT CODE 5678 ASSEMBLED ON WW 19, 2001 IN THE AS SEMBLY LINE "A" Note: "P" sembly line position indicates Lead-Free" OR Notes: 1. For an Automotive Qualified ...

Page 11

www.irf.com ‰ 11 ...

Page 12

TR 12.1 ( .476 ) 11.9 ( .469 ) NOTES : 1. CONTROLLING DIMENSION : MILLIMETER. 2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS ( INCHES ). 3. OUTLINE CONFORMS TO EIA-481 & EIA-541. 13 INCH NOTES : 1. OUTLINE CONFORMS ...

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