IXTA90N055T IXYS, IXTA90N055T Datasheet - Page 4

no-image

IXTA90N055T

Manufacturer Part Number
IXTA90N055T
Description
MOSFET N-CH 55V 90A TO-263
Manufacturer
IXYS
Series
TrenchT2™r
Datasheet

Specifications of IXTA90N055T

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
8.8 mOhm @ 25A, 10V
Drain To Source Voltage (vdss)
55V
Current - Continuous Drain (id) @ 25° C
90A
Vgs(th) (max) @ Id
4V @ 50µA
Gate Charge (qg) @ Vgs
61nC @ 10V
Input Capacitance (ciss) @ Vds
2500pF @ 25V
Power - Max
176W
Mounting Type
Surface Mount
Package / Case
D²Pak, TO-263 (2 leads + tab)
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.0088 Ohms
Drain-source Breakdown Voltage
55 V
Continuous Drain Current
90 A
Power Dissipation
176 W
Maximum Operating Temperature
+ 175 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Vdss, Max, (v)
55
Id(cont), Tc=25°c, (a)
90
Rds(on), Max, Tj=25°c, (?)
0.0088
Ciss, Typ, (pf)
2500
Qg, Typ, (nc)
61
Trr, Typ, (ns)
70
Trr, Max, (ns)
-
Pd, (w)
176
Rthjc, Max, (k/w)
0.85
Package Style
TO-263
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
IXYS reserves the right to change limits, test conditions, and dimensions.
10,000
1,000
180
160
140
120
100
300
270
240
210
180
150
120
100
80
60
40
20
90
60
30
0
0
0.4
3
0
f = 1 MHz
3.5
0.6
5
Fig. 9. Forward Voltage Drop of
T
J
= 150ºC
4
10
Fig. 7. Input Admittance
0.8
Fig. 11. Capacitance
4.5
Intrinsic Diode
15
V
V
V
GS
T
SD
J
DS
1
5
= 25ºC
- Volts
- Volts
- Volts
20
C iss
C oss
5.5
C rss
1.2
25
T
6
J
= -40ºC
1.4
150ºC
25ºC
30
6.5
1.6
35
7
1.8
7.5
40
1.00
0.10
0.01
80
70
60
50
40
30
20
10
10
0.00001
0
9
8
7
6
5
4
3
2
1
0
0
0
V
I
I
D
G
5
DS
20
= 10A
= 10mA
0.0001
= 27.5V
Fig. 12. Maximum Transient Thermal
10
40
15
Fig. 8. Transconductance
Q
0.001
Pulse Width - Seconds
Fig. 10. Gate Charge
20
60
G
- NanoCoulombs
I
D
25
- Amperes
Impedance
80
30
0.01
35
T
100
J
= - 40ºC
IXTP90N055T
IXTA90N055T
40
150ºC
25ºC
0.1
120
45
140
50
1
55
160
60
10
180
65

Related parts for IXTA90N055T