IXTP1R6N50P IXYS, IXTP1R6N50P Datasheet
Home Discrete Semiconductor Products MOSFETs, GaNFETs - Single IXTP1R6N50P
Manufacturer Part Number
IXTP1R6N50P
Description
MOSFET N-CH 500V 1.6A TO-220
Specifications of IXTP1R6N50P
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
6.5 Ohm @ 500mA, 10V
Drain To Source Voltage (vdss)
500V
Current - Continuous Drain (id) @ 25° C
1.6A
Vgs(th) (max) @ Id
5.5V @ 25µA
Gate Charge (qg) @ Vgs
3.9nC @ 10V
Input Capacitance (ciss) @ Vds
140pF @ 25V
Power - Max
43W
Mounting Type
Through Hole
Package / Case
TO-220
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
6.5 Ohms
Forward Transconductance Gfs (max / Min)
1.3 s
Drain-source Breakdown Voltage
500 V
Gate-source Breakdown Voltage
+/- 30 V
Continuous Drain Current
1.6 A
Power Dissipation
43 W
Maximum Operating Temperature
+ 150 C
Mounting Style
Through Hole
Minimum Operating Temperature
- 55 C
Vdss, Max, (v)
500
Id(cont), Tc=25°c, (a)
1.6
Rds(on), Max, Tj=25°c, (?)
6.5
Ciss, Typ, (pf)
140
Qg, Typ, (nc)
3.9
Trr, Typ, (ns)
400
Pd, (w)
43
Rthjc, Max, (k/w)
2.9
Package Style
TO-220
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
PolarHV
Power MOSFET
N-Channel Enhancement Mode
Avalanche Rated
Symbol
V
V
V
V
I
I
I
E
E
dv/dt
P
T
T
T
T
T
M
Weight
Symbol
(T
BV
V
I
I
R
© 2006 IXYS All rights reserved
D25
DM
AR
GSS
DSS
GS
J
JM
stg
L
DSS
DGR
GSM
AR
AS
D
SOLD
GS(th)
DS(on)
d
J
DSS
= 25°C, unless otherwise specified)
Test Conditions
T
T
Continuous
Transient
T
T
T
T
T
I
T
T
1.6 mm (0.062 in.) from case for 10s
Plastic body for 10 s
TO-252
TO-220
Test Conditions
V
V
V
V
V
Pulse test, t ≤ 300 μs, duty cycle d ≤ 2 %
S
V
Mounting torque (TO-220)
J
J
C
C
C
C
C
J
C
GS
DS
GS
DS
GS
GS
= 25°C to 150°C
= 25°C to 150°C; R
= 25°C
= 25°C, pulse width limited by T
= 25°C
= 25°C
= 25°C
≤ I
≤ 150°C, R
= 25°C
TM
= 0 V, I
= V
= ±30 V, V
= V
= 0 V
= 10 V, I
DM
, di/dt ≤ 100 A/μs, V
GS
DSS
, I
D
D
D
= 250 μA
= 25 μA
G
= 0.5 I
DS
= 50 Ω
= 0 V
D25
GS
= 1 MΩ
DD
T
≤ V
J
= 125°C
DSS
JM
IXTP 1R6N50P
IXTY 1R6N50P
,
500
Min.
3.0
Characteristic Values
-55 ... +150
-55 ... +150
Maximum Ratings
Typ.
1.13/10 Nm/lb.in.
300
500
500
±30
±40
150
260
1.6
2.5
1.6
0.8
75
10
43
5
4
±100
Max.
5.5
50
6.5
1
V/ns
mJ
mJ
nA
μA
μA
°C
°C
°C
°C
°C
W
Ω
V
V
V
V
A
A
A
V
V
g
g
TO-252 (IXTY)
Features
Advantages
TO-220 (IXTP)
International standard packages
Unclamped Inductive Switching (UIS)
rated
Low package inductance
- easy to drive and to protect
Easy to mount
Space savings
High power density
V
I
R
D25
DS(on)
DSS
G = Gate
S = Source
G
D
G
S
S
≤ ≤ ≤ ≤ ≤
= 500
=
1.6
6.5
D = Drain
TAB = Drain
(TAB)
DS99444E(04/06)
(TAB)
A
V
Ω Ω Ω Ω Ω
Related parts for IXTP1R6N50P
IXTP1R6N50P Summary of contents
... GSS DSS DS DSS 0.5 I DS(on D25 Pulse test, t ≤ 300 μs, duty cycle d ≤ © 2006 IXYS All rights reserved IXTP 1R6N50P IXTY 1R6N50P Maximum Ratings 500 = 1 MΩ 500 GS ±30 ±40 1.6 2 ≤ DSS 43 -55 ... +150 150 -55 ... +150 ...
... Pulse test, t ≤ 300 μs, duty cycle d ≤ 1.6 A, -di/dt = 100 A/μ 100V R IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by 4,835,592 one or moreof the following U.S. patents: 4,850,072 4,881,106 Characteristic Values (T = 25°C, unless otherwise specified) J Min ...
... Value vs. I D25 3.0 2 10V GS 2.6 2.4 2.2 2.0 1.8 1.6 1.4 1.2 1.0 0.8 0 0.4 0.8 1 Amperes D © 2006 IXYS All rights reserved º C 2.7 2.4 2.1 1.8 1.5 1.2 6V 0.9 0.6 0 º C 3.00 2.75 2.50 2.25 2. ...
... J 2.0 1.5 1.0 0.5 0.0 0.5 0.6 0 Volts S D Fig. 11. Capacitance 1000 f = 1MHz 100 Volts D S IXYS reserves the right to change limits, test conditions, and dimensions. 2.2 2.0 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 º ...
... IXYS All rights reserved Fig. 13. M axim um Trans ie nt The tance 0.001 0.01 Pulse Width - Second IXTP 1R6N50P IXTY 1R6N50P 0 ...
Related keywords
ixtp16n50p ixtp15n50l2 ixtp14n60p ixtp1r6n50p ixtp1r6n50d2 ixtp1r4n60p ixtp180n10t ixtp160n10t ixtp140p05t ixtp130n10t ixtp102n15t IXTP1R6N50P datasheet IXTP1R6N50P data sheet IXTP1R6N50P pdf datasheet IXTP1R6N50P component IXTP1R6N50P part IXTP1R6N50P distributor IXTP1R6N50P RoHS IXTP1R6N50P datasheet download