IRF7210PBF International Rectifier, IRF7210PBF Datasheet - Page 4

• Manufacturer Part Number: IRF7210PBF
• Description: MOSFET P-CH 12V 16A 8-SOIC
• Manufacturer: International Rectifier
• Series: HEXFET®r
• Type: Power MOSFETr

Specifications of IRF7210PBF

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 7 mOhm @ 16A, 4.5V
• Drain To Source Voltage (vdss): 12V
• Current - Continuous Drain (id) @ 25° C: 16A
• Vgs(th) (max) @ Id: 600mV @ 500µA
• Gate Charge (qg) @ Vgs: 212nC @ 5V
• Input Capacitance (ciss) @ Vds: 17179pF @ 10V
• Power - Max: 2.5W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Number Of Elements: 1
• Polarity: P
• Channel Mode: Enhancement
• Drain-source On-res: 0.007Ohm
• Drain-source On-volt: 12V
• Gate-source Voltage (max): ±12V
• Continuous Drain Current: 16A
• Power Dissipation: 2.5W
• Operating Temp Range: -55C to 150C
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Pin Count: 8
• Package Type: SOIC
• Configuration: Single Quad Drain Triple Source
• Transistor Polarity: P-Channel
• Resistance Drain-source Rds (on): 7 mOhms
• Drain-source Breakdown Voltage: - 12 V
• Gate-source Breakdown Voltage: 12 V
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Fall Time: 30 ns
• Gate Charge Qg: 212 nC
• Minimum Operating Temperature: - 55 C
• Rise Time: 3 ns
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

IRF7210PbF
1000
24000
20000
16000
12000
100
4
8000
10
1
0.0
Fig 7. Typical Source-Drain Diode
0
Fig 5. Typical Capacitance Vs.
-V
-V
2.0
Drain-to-Source Voltage
2
SD
DS
C
C
C
Forward Voltage
V
C
C
C
, Source-to-Drain Voltage (V)
iss
oss
rss
, Drain-to-Source Voltage (V)
GS
iss
rss
oss
T = 25°C
J
= 0V,
4
= C
= C
= C
4.0
gs
gd
ds
+ C
+ C
6
gd
gd
f = 1MHz
6.0
, C
T = 150°C
J
8
ds
SHORTED
8.0
V
GS
10
= 0V
10.0
12
A
A
1000
100
10
Fig 8. Maximum Safe Operating Area.
10
8
6
4
2
0
1
0.1
0
I
T
T
Single Pulse
D
Fig 6. Typical Gate Charge Vs.
A
J
= -10A
= 25 C
= 150 C
OPERATION IN THIS AREA LIMITED
-V
50
Gate-to-Source Voltage
DS
°
Q , Total Gate Charge (nC)
°
G
, Drain-to-Source Voltage (V)
100
1
BY R
150
DS(on)
V
DS
= -12V
200
10
www.irf.com
100us
1ms
10ms
250
100
300
A