IRF9310PBF International Rectifier, IRF9310PBF Datasheet
Home Discrete Semiconductor Products MOSFETs, GaNFETs - Single IRF9310PBF
Manufacturer Part Number
IRF9310PBF
Description
MOSFET P-CH 30V 20A 8-SOIC
Manufacturer
International Rectifier
Specifications of IRF9310PBF
Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
4.6 mOhm @ 20A, 10V
Drain To Source Voltage (vdss)
30V
Current - Continuous Drain (id) @ 25° C
20A
Vgs(th) (max) @ Id
2.4V @ 100µA
Gate Charge (qg) @ Vgs
165nC @ 10V
Input Capacitance (ciss) @ Vds
5250pF @ 15V
Power - Max
2.5W
Mounting Type
Surface Mount
Package / Case
8-SOIC (3.9mm Width)
Transistor Polarity
P Channel
Drain Source Voltage Vds
-30V
On Resistance Rds(on)
3.9mohm
Rds(on) Test Voltage Vgs
-10V
Operating Temperature Range
-55°C To +150°C
Transistor Case Style
SOIC
Rohs Compliant
Yes
Resistance Drain-source Rds (on)
6.8 mOhms
Drain-source Breakdown Voltage
- 30 V
Gate-source Breakdown Voltage
20 V
Continuous Drain Current
- 20 A
Power Dissipation
2.5 W
Mounting Style
SMD/SMT
Gate Charge Qg
58 nC
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Applications
Features and Benefits
www.irf.com
Features
Notes through
Orderable part number
IRF9310PbF
IRF9310TRPbF
Low R
Industry-Standard SO8 Package
RoHS Compliant Containing no Lead, no Bromide and no Halogen
V
V
I
I
I
P
P
T
T
Absolute Maximum Ratings
D
D
DM
J
STG
DS
GS
D
D
@ T
@ T
@T
@T
A
A
A
A
DSon
= 25°C
= 70°C
= 25°C
= 70°C
(@V
(@T
R
( 4.6m
DS(on) max
GS
A
V
I
= 25°C)
DS
D
= 10V)
are on page 2
Drain-to-Source Voltage
Gate-to-Source Voltage
Continuous Drain Current, V
Continuous Drain Current, V
Pulsed Drain Current
Power Dissipation
Power Dissipation
Linear Derating Factor
Operating Junction and
Storage Temperature Range
Package Type
-30
-20
4.6
f
f
Parameter
SO8
SO8
GS
GS
@ 10V
@ 10V
m
A
V
Tape and Reel
*
6
6
6
Tube/Bulk
Form
Standard Pack
results in
-55 to + 150
'
'
'
'
HEXFET
Quantity
Resulting Benefits
Max.
Multi-Vendor Compatibility
Environmentally Friendlier
Lower Conduction Losses
IRF9310PbF
-160
0.02
± 20
-30
-20
-16
2.5
1.6
4000
95
®
Power MOSFET
SO-8
Note
Units
W/°C
°C
W
V
A
1
Related parts for IRF9310PBF
IRF9310PBF Summary of contents
... 4 - Standard Pack Form SO8 Tube/Bulk SO8 Tape and Reel Parameter @ 10V GS @ 10V IRF9310PbF ® HEXFET Power MOSFET ' ' ' ' SO-8 Resulting Benefits Lower Conduction Losses results in Multi-Vendor Compatibility Environmentally Friendlier Note Quantity 95 4000 Max. Units -30 ± 20 -20 -16 -160 2.5 1 ...
Static @ T = 25°C (unless otherwise specified) J Parameter BV Drain-to-Source Breakdown Voltage DSS Breakdown Voltage Temp. Coefficient DSS J R DS(on) Static Drain-to-Source On-Resistance V Gate Threshold Voltage GS(th) V Gate Threshold Voltage Coefficient GS(th) ...
PULSE WIDTH Tj = 25°C 100 10 1 0.1 -2.3V 0.01 0 Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics 1000 100 150° -10V 60µs PULSE WIDTH ...
150°C 10. 25°C 1.00 0.10 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1 Source-to-Drain Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage ...
125° 25° GS, Gate -to -Source Voltage (V) Fig 12. On-Resistance vs. Gate Voltage 2700 2400 2100 1800 1500 1200 900 ...
DUT 20K S Fig 18a. Gate Charge Test Circuit D.U DRIVER -V -20V GS 0. Fig 19a. Unclamped Inductive Test Circuit Fig 20a. Switching Time Test Circuit 6 ...
SO-8 Package Outline Dimensions are shown in milimeters (inches & " YÃi !$Ãb dà IPU@T) ÃÃ9DH@ITDPIDIBÃÉÃUPG@S6I8DIBÃQ@SÃ6TH@Ã` #$H ((# !ÃÃ8PIUSPGGDIBÃ9DH@ITDPI)ÃHDGGDH@U@S "ÃÃ9DH@ITDPITÃ6S@ÃTCPXIÃDIÃHDGGDH@U@STÃbDI8C@Td #ÃÃPVUGDI@Ã8PIAPSHTÃUPÃE@9@8ÃPVUGDI@ÃHT !66 $ÃÃÃ9DH@ITDPIÃ9P@TÃIPUÃDI8GV9@ÃHPG9ÃQSPUSVTDPIT ÃÃÃÃÃHPG9ÃQSPUSVTDPITÃIPUÃUPÃ@Y8@@9à ...
... Qualification standards can be found at International Rectifier’s web site http://www.irf.com/product-info/reliability Higher qualification ratings may be available should the user have such requirements. Please contact your International Rectifier sales representative for further information: http://www.irf.com/whoto-call/salesrep/ Applicable version of JEDEC standard at the time of product release. ...
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