IXTP01N100D IXYS, IXTP01N100D Datasheet - Page 2

• Manufacturer Part Number: IXTP01N100D
• Description: MOSFET N-CH 1KV .1A TO-220AB
• Manufacturer: IXYS

Specifications of IXTP01N100D

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Depletion Mode
• Rds On (max) @ Id, Vgs: 80 Ohm @ 50mA, 0V
• Drain To Source Voltage (vdss): 1000V (1kV)
• Current - Continuous Drain (id) @ 25° C: 100mA
• Vgs(th) (max) @ Id: 5V @ 25µA
• Input Capacitance (ciss) @ Vds: 120pF @ 25V
• Power - Max: 1.1W
• Mounting Type: Through Hole
• Package / Case: TO-220
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 110 Ohm @ 0 V
• Forward Transconductance Gfs (max / Min): 150 ms
• Drain-source Breakdown Voltage: 1000 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 0.1 A
• Power Dissipation: 1100 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Vds, Max, (v): 1000
• Id(on), Min, (a): -
• Rds(on), Max, (?): 80
• Vgs(off), Max, (v): -4.5
• Ciss, Typ, (pf): 100
• Crss, Typ, (pf): 2
• Qg, Typ, (nc): 5.8
• Pd, (w): 25
• Rthjc, Max, (ºc/w): -
• Package Style: TO-220
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Gate Charge (qg) @ Vgs: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: Q1614635

IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by
Symbol
g
C
C
C
t
t
t
t
R
R
Source-Drain Diode
Symbol
V
t
Note1: Pulse test, t ≤ 300 μs, duty cycle d ≤ 2 %
one or moreof the following U.S. patents:
TO-252 AA Outline
d(on)
d(off)
f
r
rr
fs
oss
thJC
thCS
SD
iss
rss
Pins: 1 - Gate
3 - Source
Test Conditions
V
Test Conditions
V
I
V
F
DS
GS
DS
= 0.75 A, -di/dt = 10 A/μs,
= -10 V, I
= 25 V, V
= 50 V; I
V
V
V
R
TO-220
GS
DS
GS
G
2 - Drain
TAB - Drain
= -10 V, V
= 100 V V, I
= 0 V to -10
= 30Ω (External)
D
F
GS
= 100 mA
= 100 mA
= -10V
4,835,592
4,850,072
4,881,106
DS
= 25 V, f = 1 MHz
D
= 50 mA
4,931,844
5,017,508
5,034,796
Note1
Note1
(T
(T
J
J
= 25°C, unless otherwise specified)
= 25°C, unless otherwise specified)
Dim.
A1
A2
D1
E1
b1
b2
c1
e1
L1
L2
L3
5,049,961
5,063,307
5,187,117
A
D
E
H
b
c
e
L
2.19 2.38
0.89 1.14
0.64 0.89
0.76 1.14
5.21 5.46
0.46 0.58
0.46 0.58
5.97 6.22
4.32 5.21
6.35 6.73
4.32 5.21
9.40 10.42
0.51 1.02
0.64 1.02
0.89 1.27
2.54 2.92
Millimeter
Min. Max.
2.28 BSC
4.57 BSC
0 0.13
5,237,481
5,381,025
5,486,715
min.
min.
100
Characteristic Values
Characteristic Values
0.086
0.035
0.025
0.030
0.205
0.018
0.018
0.235
0.170
0.250
0.170
0.370
0.020
0.025
0.035
0.100
Min.
0.090 BSC
0.180 BSC
0.25
typ.
typ.
Inches
150
120
1.0
0
6,162,665
6,259,123 B1
6,306,728 B1
25
30
51
5
8
6
0.094
0.045
0.005
0.035
0.045
0.215
0.023
0.023
0.245
0.205
0.265
0.205
0.410
0.040
0.040
0.050
0.115
Max.
max.
max.
1.5
1.5
5
6,404,065 B1
6,534,343
6,583,505
K/W
K/W
mS
pF
pF
pF
n s
n s
n s
n s
μs
V
TO-220 AD Outline
TO-251 AA Outline
6,683,344
6,710,405B2
6,710,463
Pins: 1 - Gate
Pins: 1 - Gate
Dim.
A
A1
b
b1
b2
c
c1
D
E
e
e1
H
L
L1
L2
L3
3 - Source
IXTP 01N100D
17.02
3 - Source
Min.
2.19
0.89
0.64
0.76
5.21
0.46
0.46
5.97
6.35
2.28
4.57
8.89
1.91
0.89
1.15
6,727,585
6,759,692
Millimeter
17.78
Max.
BSC
BSC
2.38
1.14
0.89
1.14
5.46
0.58
0.58
6.22
6.73
9.65
2.28
1.27
1.52
2 - Drain
TAB - Drain
2 - Drain
TAB - Drain
Min.
.086
0.35
.025
.030
.205
.018
.018
.235
.250
.090
.180
.670
.350
.075
.035
.045
Inches
Max.
BSC
BSC
.094
.045
.035
.045
.215
.023
.023
.245
.265
.700
.380
.090
.050
.060