IRF630NSTRRPBF International Rectifier, IRF630NSTRRPBF Datasheet - Page 4
![MOSFET N-CH 200V 9.3A D2PAK](/photos/5/40/54080/21-d2pak_smd-220_sml.jpg)
IRF630NSTRRPBF
Manufacturer Part Number
IRF630NSTRRPBF
Description
MOSFET N-CH 200V 9.3A D2PAK
Manufacturer
International Rectifier
Series
HEXFET®r
Datasheet
1.IRF630NPBF.pdf
(11 pages)
Specifications of IRF630NSTRRPBF
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
300 mOhm @ 5.4A, 10V
Drain To Source Voltage (vdss)
200V
Current - Continuous Drain (id) @ 25° C
9.3A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
35nC @ 10V
Input Capacitance (ciss) @ Vds
575pF @ 25V
Power - Max
82W
Mounting Type
Surface Mount
Package / Case
D²Pak, TO-263 (2 leads + tab)
Transistor Polarity
N Channel
Continuous Drain Current Id
9.3A
Drain Source Voltage Vds
200V
On Resistance Rds(on)
300mohm
Rds(on) Test Voltage Vgs
10V
Peak Reflow Compatible (260 C)
Yes
Rohs Compliant
Yes
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IRF630NSTRRPBF
Manufacturer:
IR
Quantity:
20 000
IRF630N/S/LPbF
www.irf.com
100
1200
1000
0.1
800
600
400
200
10
1
0
0.2
1
T = 175 C
V
J
Coss
Crss
Ciss
SD
0.4
V DS , Drain-to-Source Voltage (V)
,Source-to-Drain Voltage (V)
°
V GS = 0V,
C iss = C gs + C gd , C ds SHORTED
C rss = C gd
C oss = C ds + C gd
10
0.6
0.8
f = 1 MHZ
100
T = 25 C
J
V
1.0
GS
°
= 0 V
1000
1.2
1000
100
0.1
10
1
16
12
1
8
4
0
T
T
Single Pulse
0
C
J
I =
D
= 25 C °
= 175 C
OPERATION IN THIS AREA LIMITED
V
5.4A
DS
5
°
Q , Total Gate Charge (nC)
, Drain-to-Source Voltage (V)
G
10
10
BY R
V
V
V
DS(on)
15
DS
DS
DS
= 160V
= 100V
= 40V
100
20
10us
100us
1ms
10ms
25
4
1000
30