IRLU7821PBF International Rectifier, IRLU7821PBF Datasheet - Page 5

• Manufacturer Part Number: IRLU7821PBF
• Description: MOSFET N-CH 30V 65A I-PAK
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRLU7821PBF

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 10 mOhm @ 15A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 65A
• Vgs(th) (max) @ Id: 1V @ 250µA
• Gate Charge (qg) @ Vgs: 14nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 1030pF @ 15V
• Power - Max: 75W
• Mounting Type: Through Hole
• Package / Case: IPak, TO-251, DPak, VPak (3 straight leads + tab)
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 12.5 mOhms
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 65 A
• Power Dissipation: 75 W
• Mounting Style: SMD/SMT
• Gate Charge Qg: 10 nC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: *IRLU7821PBF

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0.01
0.1
70
60
50
40
30
20
10
10
0.00001
0
1
25
Fig 9. Maximum Drain Current Vs.
D = 0.50
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
0.20
0.10
0.05
0.02
0.01
50
T , Case Temperature ( C)
Case Temperature
C
LIMITED BY PACKAGE
75
(THERMAL RESPONSE)
0.0001
SINGLE PULSE
100
°
125
150
t , Rectangular Pulse Duration (sec)
1
0.001
175
Fig 10. Threshold Voltage Vs. Temperature
2.5
2.0
1.5
1.0
0.5
-75 -50 -25
0.01
1. Duty factor D =
2. Peak T
Notes:
I D = 250µA
T J , Temperature ( °C )
0
J
25
= P
DM
50
x Z
t / t
1
0.1
75 100 125 150 175 200
thJC
P
2
DM
+ T
C
t
1
t
2
5
1