IRFZ46ZSPBF International Rectifier, IRFZ46ZSPBF Datasheet - Page 3

• Manufacturer Part Number: IRFZ46ZSPBF
• Description: MOSFET N-CH 55V 51A D2PAK
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRFZ46ZSPBF

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 13.6 mOhm @ 31A, 10V
• Drain To Source Voltage (vdss): 55V
• Current - Continuous Drain (id) @ 25° C: 51A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 46nC @ 10V
• Input Capacitance (ciss) @ Vds: 1460pF @ 25V
• Power - Max: 82W
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Current, Drain: 51 A
• Gate Charge, Total: 31 nC
• Package Type: D2Pak
• Polarization: N-Channel
• Power Dissipation: 82 W
• Resistance, Drain To Source On: 10.9 Milliohms
• Temperature, Operating, Maximum: +175 °C
• Temperature, Operating, Minimum: -55 °C
• Time, Turn-off Delay: 37 ns
• Time, Turn-on Delay: 13 ns
• Transconductance, Forward: 45 S
• Voltage, Breakdown, Drain To Source: 55 V
• Voltage, Forward, Diode: 1.3 V
• Voltage, Gate To Source: ±20 V
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 13.6 m Ohms
• Drain-source Breakdown Voltage: 55 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 51 A
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Fall Time: 39 ns
• Gate Charge Qg: 31 nC
• Minimum Operating Temperature: - 55 C
• Rise Time: 63 ns
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: *IRFZ46ZSPBF

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1000
1000
100
100
1.0
Fig 3. Typical Transfer Characteristics
10
10
Fig 1. Typical Output Characteristics
1
0.1
4
TOP
BOTTOM
V DS , Drain-to-Source Voltage (V)
V GS , Gate-to-Source Voltage (V)
5
T J = 25°C
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
4.5V
1
6
4.5V
7
V DS = 15V
20µs PULSE WIDTH
20µs PULSE WIDTH
Tj = 25°C
10
8
T J = 175°C
9
100
10
1000
100
Fig 4. Typical Forward Transconductance
60
50
40
30
20
10
10
Fig 2. Typical Output Characteristics
1
0
0.1
0
TOP
BOTTOM
V DS , Drain-to-Source Voltage (V)
10
I D ,Drain-to-Source Current (A)
vs. Drain Current
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
4.5V
20
1
30
T J = 25°C
20µs PULSE WIDTH
Tj = 175°C
4.5V
T J = 175°C
40
10
V DS = 10V
50
3
100
60