IRF7455PBF International Rectifier, IRF7455PBF Datasheet - Page 5

• Manufacturer Part Number: IRF7455PBF
• Description: MOSFET N-CH 30V 15A 8-SOIC
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRF7455PBF

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 7.5 mOhm @ 15A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 15A
• Vgs(th) (max) @ Id: 2V @ 250µA
• Gate Charge (qg) @ Vgs: 56nC @ 5V
• Input Capacitance (ciss) @ Vds: 3480pF @ 25V
• Power - Max: 2.5W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Current, Drain: 15 A
• Gate Charge, Total: 37 nC
• Package Type: SO-8
• Polarization: N-Channel
• Power Dissipation: 2.5 W
• Resistance, Drain To Source On: 0.06 Ohm
• Temperature, Operating, Maximum: +150 °C
• Temperature, Operating, Minimum: -55 °C
• Time, Turn-off Delay: 51 ns
• Time, Turn-on Delay: 17 ns
• Transconductance, Forward: 44 S
• Voltage, Breakdown, Drain To Source: 30 V
• Voltage, Forward, Diode: 1.2 V
• Voltage, Gate To Source: ±12 V
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 9 mOhms
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: 12 V
• Continuous Drain Current: 15 A
• Mounting Style: SMD/SMT
• Gate Charge Qg: 37 nC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

IRF7455PbF
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