IRF7700TRPBF International Rectifier, IRF7700TRPBF Datasheet

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IRF7700TRPBF

Manufacturer Part Number
IRF7700TRPBF
Description
MOSFET P-CH 20V 8.6A 8-TSSOP
Manufacturer
International Rectifier
Series
HEXFET®r
Datasheet

Specifications of IRF7700TRPBF

Package / Case
8-TSSOP
Mounting Type
Surface Mount
Power - Max
1.5W
Fet Type
MOSFET P-Channel, Metal Oxide
Gate Charge (qg) @ Vgs
89nC @ 5V
Vgs(th) (max) @ Id
1.2V @ 250µA
Current - Continuous Drain (id) @ 25° C
8.6A
Drain To Source Voltage (vdss)
20V
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
15 mOhm @ 8.6A, 4.5V
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Description
HEXFET
utilize advanced processing techniques to achieve ex-
tremely low on-resistance per silicon area. This benefit,
combined with the ruggedized device design , that Inter-
national Rectifier is well known for,
signer with an extremely efficient and reliable device
for use in battery and load management.
The TSSOP-8 package, has 45% less footprint area than
the standard SO-8. This makes the TSSOP-8 an ideal
device for applications where printed circuit board space
is at a premium.
The low profile (<1.1mm) of the TSSOP-8 will allow it to fit
easily into extremely thin application environments such
as portable electronics and PCMCIA cards.
Absolute Maximum Ratings
Thermal Resistance
www.irf.com
V
I
I
I
P
P
V
T
R
D
D
DM
J,
DS
D
D
GS
@ T
@ T
JA
P-Channel MOSFET
Ultra Low On-Resistance
Very Small SOIC Package
Low Profile (< 1.1mm)
Available in Tape & Reel
@T
@T
T
STG
C
C
C
C
®
= 25°C
= 70°C
= 25°C
= 70°C
power MOSFETs from International Rectifier
Drain- Source Voltage
Continuous Drain Current, V
Continuous Drain Current, V
Pulsed Drain Current
Linear Derating Factor
Gate-to-Source Voltage
Junction and Storage Temperature Range
Maximum Junction-to-Ambient
Power Dissipation
Power Dissipation
Parameter
Parameter
provides the de-
GS
GS
@ -4.5V
@ -4.5V
2
3
4
1
1 = D
2 = S
3 = S
4 = G
V
-20V
DSS
G
D
S
HEXFET
0.015@V
0.024@V
8 = D
7 = S
6 = S
5 = D
-55 to + 150
R
Max.
8
7
6
5
Max.
DS(on)
±8.6
±6.8
0.96
0.01
±68
± 12
83
-20
1.5
®
GS
GS
IRF7700
Power MOSFET
max
= -4.5V
= -2.5V
TSSOP-8
PD - 93894A
-8.6A
-7.3A
Units
Units
I
W/°C
°C/W
D
W
°C
V
A
V
1
6/19/00

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IRF7700TRPBF Summary of contents

Page 1

... Low Profile (< 1.1mm) Available in Tape & Reel Description ® HEXFET power MOSFETs from International Rectifier utilize advanced processing techniques to achieve ex- tremely low on-resistance per silicon area. This benefit, combined with the ruggedized device design , that Inter- national Rectifier is well known for, signer with an extremely efficient and reliable device for use in battery and load management ...

Page 2

IRF7700 Electrical Characteristics @ T Parameter V Drain-to-Source Breakdown Voltage (BR)DSS Breakdown Voltage Temp. Coefficient (BR)DSS J R Static Drain-to-Source On-Resistance DS(on) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-to-Source Leakage Current DSS Gate-to-Source ...

Page 3

VGS TOP -15V -10V -4.5V -3.0V -2.7V -2.5V -2.25V BOTTOM -2.0V -2.0V 10 20µs PULSE WIDTH 0 Drain-to-Source Voltage (V) DS Fig 1. Typical Output Characteristics 100 T J ...

Page 4

IRF7700 2000 1MHz iss rss 1600 oss iss 1200 800 400 C oss C ...

Page 5

T , Case Temperature ( C) C Fig 9. Maximum Drain Current Vs. Case Temperature 100 D = 0.50 0.20 10 0.10 0.05 0.02 0.01 1 SINGLE PULSE (THERMAL RESPONSE) ...

Page 6

IRF7700 0.026 0.022 0.018 -8.6A 0.014 0.010 2.0 4.0 6.0 -V GS, Gate -to -Source Voltage (V) Fig 11. Typical On-Resistance Vs. Gate Voltage Charge Fig 13a. Basic Gate ...

Page 7

Temperature (°C) Fig 14. Threshold Voltage Vs. Temperature www.irf.com -250µ 100 150 0.01 Fig 15. Typical Power ...

Page 8

IRF7700 TSSOP-8 Part Marking Information EXAMPLE: THIS IS AN IRF7702 LOT CODE (XX) XXYW PART NUMBER 7702 DAT E CODE EXAMPLES: 9503 = 5C 9532 = EF WORK WEEK 27-52, ALPHANUMERIC YEAR CODE (A,B, ...ET C.) TSSOP-8 Tape and Reel ...

Page 9

TSSOP-8 Package Outline IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 IR EUROPEAN REGIONAL CENTRE: 439/445 Godstone Rd, Whyteleafe, Surrey CR3 OBL, UK Tel (0)20 8645 8000 IR JAPAN: K&H Bldg., 2F, ...

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