IRF7240TRPBF International Rectifier, IRF7240TRPBF Datasheet - Page 3

• Manufacturer Part Number: IRF7240TRPBF
• Description: MOSFET P-CH 40V 10.5A 8-SOIC
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRF7240TRPBF

• Package / Case: 8-SOIC (3.9mm Width)
• Mounting Type: Surface Mount
• Power - Max: 2.5W
• Fet Type: MOSFET P-Channel, Metal Oxide
• Gate Charge (qg) @ Vgs: 110nC @ 10V
• Vgs(th) (max) @ Id: 3V @ 250µA
• Current - Continuous Drain (id) @ 25° C: 10.5A
• Drain To Source Voltage (vdss): 40V
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 15 mOhm @ 10.5A, 10V
• Transistor Polarity: P-Channel
• Resistance Drain-source Rds (on): 25 mOhms
• Drain-source Breakdown Voltage: - 40 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: - 10.5 A
• Power Dissipation: 2.5 W
• Mounting Style: SMD/SMT
• Gate Charge Qg: 73 nC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

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1000
0.01
0.01
100
100
0.1
0.1
10
Fig 3. Typical Transfer Characteristics
10
Fig 1. Typical Output Characteristics
1
1
2.5
0.1
TOP
BOTTOM
-V
-V
T = 150 C
J
DS
VGS
-15V
-10V
-4.5V
-3.7V
-3.5V
-3.3V
-3.0V
-2.7V
GS
, Drain-to-Source Voltage (V)
3.0
, Gate-to-Source Voltage (V)
°
1
T = 25 C
J
3.5
-2.70V
°
V
20µs PULSE WIDTH
20µs PULSE WIDTH
T = 25 C
J
DS
10
= -25V
°
4.0
100
4.5
1000
100
Fig 2. Typical Output Characteristics
2.0
1.5
1.0
0.5
0.0
0.1
10
1
-60 -40 -20
Fig 4. Normalized On-Resistance
0.1
I =
TOP
BOTTOM
D
-10.5A
-V
DS
T , Junction Temperature ( C)
VGS
-15V
-10V
-4.5V
-3.7V
-3.5V
-3.3V
-3.0V
-2.7V
J
Vs. Temperature
, Drain-to-Source Voltage (V)
0
1
20
40
-2.70V
60
IRF7240
20µs PULSE WIDTH
T = 150 C
J
80 100 120 140 160
10
°
V
°
GS
=
-10V
3
100