IRF7822TRPBF International Rectifier, IRF7822TRPBF Datasheet - Page 2

• Manufacturer Part Number: IRF7822TRPBF
• Description: MOSFET N-CH 30V 18A 8-SOIC
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRF7822TRPBF

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 6.5 mOhm @ 15A, 4.5V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 18A
• Vgs(th) (max) @ Id: 1V @ 250µA
• Gate Charge (qg) @ Vgs: 60nC @ 5V
• Input Capacitance (ciss) @ Vds: 5500pF @ 16V
• Power - Max: 3.1W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Current, Drain: 18 A
• Gate Charge, Total: 44 nC (Control FET), 38 nC (Synchronous FET)
• Package Type: SO-8
• Polarization: N-Channel
• Power Dissipation: 3.1 W
• Resistance, Drain To Source On: 5 Milliohms
• Temperature, Operating, Maximum: +150 °C
• Temperature, Operating, Minimum: -55 °C
• Time, Turn-off Delay: 22 ns
• Time, Turn-on Delay: 15 ns
• Voltage, Breakdown, Drain To Source: 30 V
• Voltage, Forward, Diode: 1 V
• Voltage, Gate To Source: ±12 V
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 6.5 mOhms
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: 12 V
• Continuous Drain Current: 18 A
• Mounting Style: SMD/SMT
• Gate Charge Qg: 44 nC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: IRF7822PBFTR; IRF7822TRPBF; IRF7822TRPBFTR

IRF7822PbF
Electrical Characteristics
Source-Drain Rating & Characteristics
Parameter
Drain-to-Source
Breakdown Voltage
Static Drain-Source
on Resistance
Gate Threshold Voltage
Drain-Source Leakage
Current
Current*
Gate-Source Leakage
Current
Total Gate Chg Cont FET
Total Gate Chg Sync FET
Pre-Vth
Gate-Source Charge
Post-Vth
Gate-Source Charge
Gate to Drain Charge
Switch Chg(Q
Output Charge
Gate Resistance
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance C
Parameter
Diode Forward
Voltage*
Reverse Recovery
Charge„
Reverse Recovery
Charge (with Parallel
Schottky)„
2
Notes:

‚
ƒ
„
…
gs2
measured at V
Typical values of R
Repetitive rating; pulse width limited by max. junction temperature.
Pulse width ≤ 400 µs; duty cycle ≤ 2%.
When mounted on 1 inch square copper board
Typ = measured - Q
+ Q
gd
)
GS
V
BV
R
I
I
Q
Q
Q
Q
Q
Q
Q
R
t
t
t
t
C
C
V
= 5.0V, I
Q
Q
DSS
GSS
d (on)
r
d (off)
f
GS(th)
DS
G
SD
DS
G
G
GS1
GS2
GD
sw
iss
oss
rss
oss
rr
rr(s)
oss
DSS
(on)
(on) measured at V
F
= 15A.
Min
Min
1.0
30
–
–
–
5500
1000
Typ
300
Typ
120
108
5.0
3.0
9.0
1.5
5.5
44
38
13
12
27
15
22
12
–
GS
±100
Max
= 4.5V, Q
Max
150
6.5
1.0
30
60
–
–
–
–
Units
Units
m
G
nC
µA
nA
pF
nC
nC
ns
Ω
, Q
V
V
V
Ω
SW
and Q
V
V
V
V
V
V
V
V
V
V
V
Clamped Inductive Load
V
I
di/dt ~ 700A/µs
V
di/dt = 700A/µs
(with 10BQ040)
V
S
Conditions
Conditions
V
GS
GS
GS
DS
DS
DS
Tj = 100°C
GS
GS
DS
DS
DD
DS
DS
DS
= 15A‚, V
OSS
GS
=5.0V, I
= 0V, I
= 4.5V, I
= V
= 24V, V
= 24V, V
= 5.0V, V
= 16V, I
= 16V, V
= 16V, I
= 5.0V
= 16V, V
= 16V, V
= 16V, V
= ±12V
GS
,I
D
D
D
D
D
= 250µA
= 250µA
D
GS
GS
GS
=15A, V
GS
GS
GS
GS
DS
= 15A
= 15A
= 15A‚
= 0
= 0,
< 100mV
= 0
= 0
= 0V, I
= 0V, I
= 0V
DS
S
S
=16V
= 15A
= 15A
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