IRF7210TRPBF International Rectifier, IRF7210TRPBF Datasheet

IRF7210TRPBF

Manufacturer Part Number

IRF7210TRPBF

Description

MOSFET P-CH 12V 16A 8-SOIC

Manufacturer

International Rectifier

Series

HEXFET®r

Datasheet

1.IRF7210TRPBF.pdf (7 pages)

Specifications of IRF7210TRPBF

Package / Case

8-SOIC (3.9mm Width)

Mounting Type

Surface Mount

Power - Max

2.5W

Fet Type

MOSFET P-Channel, Metal Oxide

Gate Charge (qg) @ Vgs

212nC @ 5V

Vgs(th) (max) @ Id

600mV @ 500µA

Current - Continuous Drain (id) @ 25° C

16A

Drain To Source Voltage (vdss)

12V

Fet Feature

Logic Level Gate

Rds On (max) @ Id, Vgs

7 mOhm @ 16A, 4.5V

Lead Free Status / RoHS Status

Lead free / RoHS Compliant

Available stocks

Company

Part Number

Manufacturer

Quantity

Price

Company:

Meier Automation Equipment Co., Limited

Part Number:

IRF7210TRPBF

Manufacturer:

Quantity:

20 000

Company:

H&T Electronics

Part Number:

IRF7210TRPBF

Quantity:

15 979

Current page: 1 of 7
Download datasheet (548Kb)

Thermal Resistance

Description

These P-Channel MOSFETs from International Rectifier

utilize advanced processing techniques to achieve the

extremely low on-resistance per silicon area. This benefit

provides the designer with an extremely efficient device for

use in battery and load management applications.

The SO-8 has been modified through a customized

leadframe for enhanced thermal characteristics and

multiple-die capability making it ideal in a variety of power

applications. With these improvements, multiple devices

can be used in an application with dramatically reduced

board space. The package is designed for vapor phase,

infra red, or wave soldering techniques.

www.irf.com

GSM

θJA

@ T

Ultra Low On-Resistance

P-Channel MOSFET

Surface Mount

Available in Tape & Reel

Lead-Free

STG

= 70°C

= 25°C

= 70°C

Drain- Source Voltage

Continuous Drain Current, V

Pulsed Drain Current

Power Dissipation

Linear Derating Factor

Gate-to-Source Voltage

Gate-to-Source Voltage Single Pulse tp<10µs

Junction and Storage Temperature Range

Maximum Junction-to-Ambient

Parameter

@ -4.5V

Top View

HEXFET Power MOSFET

IRF7210PbF

-55 to + 150

Max.

±100

0.02

±16

±12

± 12

-12

2.5

1.6

DS(on)

DSS

= 0.007Ω

= -12V

Units

08/19/05

W/°C

°C/W

°C

Related parts for IRF7210TRPBF

Related keywords

irf720
irf7241
irf7220
irf7207
irf7204
irf7201
irf7240
irf7210
irf721
irf7205
irf7240pbf
irf7210tr
irf7210pbf
IRF7210TRPBF datasheet
IRF7210TRPBF data sheet
IRF7210TRPBF pdf datasheet
IRF7210TRPBF component
IRF7210TRPBF part
IRF7210TRPBF distributor
IRF7210TRPBF RoHS
IRF7210TRPBF datasheet download