IRL5602SPBF International Rectifier, IRL5602SPBF Datasheet

IRL5602SPBF

Manufacturer Part Number

IRL5602SPBF

Description

MOSFET P-CH 20V 24A D2PAK

Manufacturer

International Rectifier

Series

HEXFET®r

Datasheets

1.IRL5602SPBF.pdf (10 pages)

2.IRL5602SPBF.pdf (4 pages)

Specifications of IRL5602SPBF

Fet Type

MOSFET P-Channel, Metal Oxide

Fet Feature

Logic Level Gate

Rds On (max) @ Id, Vgs

42 mOhm @ 12A, 4.5V

Drain To Source Voltage (vdss)

20V

Current - Continuous Drain (id) @ 25° C

24A

Vgs(th) (max) @ Id

1V @ 250µA

Gate Charge (qg) @ Vgs

44nC @ 4.5V

Input Capacitance (ciss) @ Vds

1460pF @ 15V

Power - Max

75W

Mounting Type

Surface Mount

Package / Case

D²Pak, TO-263 (2 leads + tab)

Channel Type

Current, Drain

–24 A

Gate Charge, Total

44 nC

Package Type

D2-PAK

Polarization

P-Channel

Power Dissipation

75 W

Resistance, Drain To Source On

0.042 Ohm

Resistance, Thermal, Junction To Case

40 °C/W

Temperature, Operating, Maximum

+175 °C

Temperature, Operating, Minimum

-55 °C

Time, Turn-off Delay

53 ns

Time, Turn-on Delay

9.7 ns

Transconductance, Forward

12 S

Voltage, Breakdown, Drain To Source

-20 V

Voltage, Drain To Source

–20 V

Voltage, Forward, Diode

-1.4 V

Voltage, Gate To Source

±8 V

Configuration

Single

Transistor Polarity

P-Channel

Resistance Drain-source Rds (on)

42 mOhms

Drain-source Breakdown Voltage

- 20 V

Gate-source Breakdown Voltage

8 V

Continuous Drain Current

24 A

Maximum Operating Temperature

+ 175 C

Mounting Style

SMD/SMT

Fall Time

84 ns

Gate Charge Qg

29.3 nC

Minimum Operating Temperature

- 55 C

Rise Time

73 ns

Lead Free Status / RoHS Status

Lead free / RoHS Compliant

Other names

*IRL5602SPBF

Available stocks

Company

Part Number

Manufacturer

Quantity

Price

Company:

Bonase Electronics (HK) Co., Limited

Part Number:

IRL5602SPBF-X

Manufacturer:

Quantity:

2 000

Company:

BOSTOCK HK LIMITED

Part Number:

IRL5602SPBF-X

Quantity:

1 000

Company:

Meier Automation Equipment Co., Limited

Part Number:

IRL5602SPBF-X

Manufacturer:

Quantity:

20 000

Current page: 1 of 10
Download datasheet (239Kb)

Fifth Generation HEXFETs from International Rectifier utilize advanced

processing techniques to achieve extremely low on-resistance per silicon area.

This benefit, combined with the fast switching speed and ruggedized device

design that HEXFET Power MOSFETs are well known for, provides the

designer with an extremely efficient and reliable device for use in a wide variety

of applications.

The D

sizes up to HEX-4. It provides the highest power capability and the lowest

possible on-resistance in any existing surface mount package. The D

suitable for high current applications because of its low internal connection

resistance and can dissipate up to 2.0W in a typical surface mount application.

Thermal Resistance

dv/dt

www.irf.com

STG

θJC

θJA

@ T

Advanced Process Technology

Dynamic dv/dt Rating

175°C Operating Temperature

P-Channel

Fast Switching

Fully Avalanche Rated

Lead-Free

Pak is a surface mount power package capable of accommodating die

= 25°C

= 100°C

= 25°C

Continuous Drain Current, V

Pulsed Drain Current

Power Dissipation

Linear Derating Factor

Gate-to-Source Voltage

Single Pulse Avalanche Energy‚

Avalanche Current

Repetitive Avalanche Energy

Peak Diode Recovery dv/dt ƒ

Operating Junction and

Storage Temperature Range

Soldering Temperature, for 10 seconds

Junction-to-Case

Junction-to-Ambient ( PCB Mounted,steady-state)**

Parameter

@ -4.5V

Typ.

300 (1.6mm from case )

–––

Pak is

HEXFET

-55 to + 175

Max.

-0.81

± 8.0

290

-24

-17

-96

-12

0.5

7.5

Power MOSFET

DS(on)

Max.

2.0

DSS

D Pak

= -24A

= 0.042Ω

= -20V

Units

W/°C

V/ns

°C

03/10/04

Related parts for IRL5602SPBF

IRL5602SPBF Summary of contents

Page 1

... Fully Avalanche Rated l Lead-Free l Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications ...

Page 2

Electrical Characteristics @ T Parameter V Drain-to-Source Breakdown Voltage (BR)DSS Breakdown Voltage Temp. Coefficient ∆V /∆T (BR)DSS J R Static Drain-to-Source On-Resistance DS(on) V Gate Threshold Voltage GS(th) g Forward Transconductance fs Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Q Total ...

Page 3

VGS TOP -15V -12V -10V -7.0V -5.0V -4.5V -2.7V BOTTOM -2.0V 10 -2.0V 20µs PULSE WIDTH 0 Drain-to-Source Voltage (V) DS Fig 1. Typical Output Characteristics 100 ...

Page 4

1MHz iss 2400 rss oss ds gd 2000 C iss 1600 C oss 1200 800 ...

Page 5

T , Case Temperature ( C) C Fig 9. Maximum Drain Current Vs. Case Temperature 0.50 1 0.20 0.10 0.05 0.1 0.02 SINGLE PULSE 0.01 (THERMAL ...

Page 6

D.U DRIVER -20V 0.01 Ω Charge 6 1000 800 600 400 15V 200 0 25 Starting ...

Page 7

D.U.T + ‚ - Driver Gate Drive D.U.T. I Reverse Recovery Current D.U.T. V Re-Applied Voltage Inductor Curent www.irf.com + • • ƒ • • • • Period D = P.W. Waveform SD Body Diode Forward Current ...

Page 8

T HIS IS AN IRF530S WIT H LOT CODE 8024 ASS EMBLED ON WW 02, 2000 SEMBLY LINE "L" INT ERNATIONAL RECT IFIER F530S LOGO AS S EMBLY LOT CODE PART NUMBER ...

Page 9

TRR FEED DIRECTION 1.85 (.073) 1.65 (.065) TRL FEED DIRECTION 330.00 (14.173) MAX. NOTES : 1. COMFORMS TO EIA-418. 2. CONTROLLING DIMENSION: MILLIMETER. 3. DIMENSION MEASURED @ HUB. 4. INCLUDES FLANGE DISTORTION @ OUTER EDGE. IR WORLD HEADQUARTERS: 233 ...

Page 10

Note: For the most current drawings please refer to the IR website at: http://www.irf.com/package/ ...

Related keywords

irl560
irl5602s
irl5602strlpbf
irl5602spbf
IRL5602SPBF datasheet
IRL5602SPBF data sheet
IRL5602SPBF pdf datasheet
IRL5602SPBF component
IRL5602SPBF part
IRL5602SPBF distributor
IRL5602SPBF RoHS
IRL5602SPBF datasheet download