IRF6709S2TRPBF International Rectifier, IRF6709S2TRPBF Datasheet - Page 9
IRF6709S2TRPBF
Manufacturer Part Number
IRF6709S2TRPBF
Description
MOSFET N-CH 25V 12A DIRECTFET-S1
Manufacturer
International Rectifier
Series
HEXFET®r
Datasheet
1.IRF6709S2TRPBF.pdf
(10 pages)
Specifications of IRF6709S2TRPBF
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
3.8 mOhm @ 19A, 10V
Drain To Source Voltage (vdss)
25V
Current - Continuous Drain (id) @ 25° C
19A
Vgs(th) (max) @ Id
2.35V @ 25µA
Gate Charge (qg) @ Vgs
20nC @ 4.5V
Input Capacitance (ciss) @ Vds
1810pF @ 13V
Power - Max
2.2W
Mounting Type
Surface Mount
Package / Case
DirectFET™ Isometric S1
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
13.5 mOhms
Drain-source Breakdown Voltage
25 V
Gate-source Breakdown Voltage
20 V
Continuous Drain Current
39 A
Power Dissipation
21 W
Gate Charge Qg
8.1 nC
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IRF6709S2TRPBF
Manufacturer:
IR
Quantity:
20 000
Please see AN-1035 for DirectFET assembly details and stencil and substrate design recommendations
DirectFET Part Marking
www.irf.com
LOGO
PART NUMBER
BATCH NUMBER
DATE CODE
GATE MARKING
Line above the last character of
the date code indicates "Lead-Free"
CODE
A
B
C
D
E
F
G
H
J
K
L
M
R
P
1.08
1.70
MIN
4.75
3.70
2.75
0.35
0.48
0.58
0.48
N/A
0.80
0.68
0.020
0.08
METRIC
DIMENSIONS
1.12
1.80
MAX
4.85
3.95
2.85
0.45
0.52
0.62
0.52
N/A
0.90
0.740
0.080
0.17
N/A
0.187
0.146
0.108
0.014
0.019
0.023
0.019
0.042
0.031
0.066
0.027
0.001
0.003
MIN
IMPERIAL
0.191
0.156
0.112
0.018
0.020
0.024
0.020
0.044
N/A
0.035
0.070
0.029
0.003
0.007
MAX
9