IRF7410TRPBF International Rectifier, IRF7410TRPBF Datasheet
IRF7410TRPBF
Specifications of IRF7410TRPBF
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IRF7410TRPBF Summary of contents
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... Description ® These P-Channel HEXFET Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve the extremely low on-resistance per silicon area. This benefit provides the designer with an extremely efficient device for use in battery and load management applications.. The SO-8 has been modified through a customized ...
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Electrical Characteristics @ T Parameter V Drain-to-Source Breakdown Voltage (BR)DSS Breakdown Voltage Temp. Coefficient ∆V /∆T (BR)DSS J R Static Drain-to-Source On-Resistance DS(on) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-to-Source Leakage Current DSS Gate-to-Source Forward Leakage ...
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PULSE WIDTH Tj = 25°C 0.1 0 Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics 100 ° 150 ° ...
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0V MHZ C iss = SHORTED 12000 C rss = oss = 10000 Ciss 8000 6000 4000 ...
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T , Case Temperature Fig 9. Maximum Drain Current Vs. Case Temperature 100 D = 0.50 0.20 10 0.10 0.05 0.02 1 0.01 SINGLE PULSE 0.1 (THERMAL RESPONSE) 0.01 ...
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-16A 0.004 0.002 0.0 2.0 4.0 -V GS, Gate -to -Source Voltage (V) Fig 12. Typical On-Resistance Vs. Gate Voltage Charge Fig 14a. Basic Gate Charge ...
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Temperature ( °C ) Fig 15. Typical Vgs(th) Vs. Junction Temperature www.irf.com 700 600 500 400 -250µA 300 200 100 0 0.0001 0.0010 ...
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SO-8 Package Details 0.25 [.010 NOT DIMENS IONING & T OLERANCING PER AS ME ...
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Tape and Reel TERMINAL NUMBER 1 8.1 ( .318 ) 7.9 ( .312 ) NOTES: 1. CONTROLLING DIMENSION : MILLIMETER. 2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES). 3. OUTLINE CONFORMS TO EIA-481 & EIA-541. NOTES : 1. CONTROLLING DIMENSION : ...