IXTP3N60P IXYS, IXTP3N60P Datasheet - Page 3

• Manufacturer Part Number: IXTP3N60P
• Description: MOSFET N-CH 600V 3A TO-220
• Manufacturer: IXYS
• Series: PolarHV™r

Specifications of IXTP3N60P

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 2.9 Ohm @ 500mA, 10V
• Drain To Source Voltage (vdss): 600V
• Current - Continuous Drain (id) @ 25° C: 3A
• Vgs(th) (max) @ Id: 5.5V @ 50µA
• Gate Charge (qg) @ Vgs: 9.8nC @ 10V
• Input Capacitance (ciss) @ Vds: 411pF @ 25V
• Power - Max: 70W
• Mounting Type: Through Hole
• Package / Case: TO-220
• Vdss, Max, (v): 600
• Id(cont), Tc=25°c, (a): 3.0
• Rds(on), Max, Tj=25°c, (?): 2.9
• Ciss, Typ, (pf): 411
• Qg, Typ, (nc): 9.8
• Trr, Typ, (ns): 500
• Pd, (w): 70
• Rthjc, Max, (k/w): 1.8
• Package Style: TO-220
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

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2.7
2.4
2.1
1.8
1.5
1.2
0.9
0.6
0.3
2.7
2.4
2.1
1.8
1.5
1.2
0.9
0.6
0.3
2.8
2.6
2.4
2.2
1.8
1.6
1.4
1.2
0.8
3
0
3
0
3
2
1
0
0
0
V
GS
1
2
Fig. 3. Output Characteristics
Fig. 5. R
Fig. 1. Output Characteristics
= 10V
1
2
4
0.5 I
V
3
6
GS
DS(on)
2
V
I
D25
D
D S
V
= 10V
V
4
@ 125
8
D S
- Amperes
8V
7V
GS
@ 25
Value vs. I
- Volts
Norm alized to
10
- Volts
6V
= 10V
5
3
8V
7V
º
º
6V
5V
C
C
12
6
T
J
4
14
D
= 125
7
T
J
= 25
16
8
º
C
5
º
18
C
9
10
20
6
3.3
2.7
2.4
2.1
1.8
1.5
1.2
0.9
0.6
0.3
5.5
4.5
3.5
2.5
1.5
0.5
3.1
2.8
2.5
2.2
1.9
1.6
1.3
0.7
0.4
3
0
6
5
4
3
2
1
0
1
-50
-50
Fig. 2. Extended Output Characteristics
0
Fig. 6. Drain Current vs. Case
Fig. 4. R
V
Value vs. Junction Tem perature
GS
3
-25
-25
IXTA 3N60P IXTP 3N60P
= 10V
6
T
Tem perature
0
DS(on
0
T
C
J
- Degrees Centigrade
9
- Degrees Centigrade
V
I
25
GS
)
25
D
Norm alized to 0.5 I
12
@ 25
V
= 3A
D S
= 10V
8V
15
50
50
- Volts
º
C
7V
6V
18
75
75
I
IXTY 3N60P
D
= 1.5A
21
100
100
24
D25
125
125
27
150
150
30