IRF6216PBF International Rectifier, IRF6216PBF Datasheet - Page 2
IRF6216PBF
Manufacturer Part Number
IRF6216PBF
Description
MOSFET P-CH 150V 2.2A 8-SOIC
Manufacturer
International Rectifier
Series
HEXFET®r
Type
Power MOSFETr
Specifications of IRF6216PBF
Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
240 mOhm @ 1.3A, 10V
Drain To Source Voltage (vdss)
150V
Current - Continuous Drain (id) @ 25° C
2.2A
Vgs(th) (max) @ Id
5V @ 250µA
Gate Charge (qg) @ Vgs
49nC @ 10V
Input Capacitance (ciss) @ Vds
1280pF @ 25V
Power - Max
2.5W
Mounting Type
Surface Mount
Package / Case
8-SOIC (3.9mm Width)
Channel Type
P
Current, Drain
-2.2 A
Gate Charge, Total
33 nC
Package Type
SO-8
Polarization
P-Channel
Power Dissipation
2.5 W
Resistance, Drain To Source On
0.24 Ohm
Temperature, Operating, Maximum
+150 °C
Temperature, Operating, Minimum
-55 °C
Time, Turn-off Delay
33 ns
Time, Turn-on Delay
18 ns
Transconductance, Forward
2.7 S
Voltage, Breakdown, Drain To Source
-150 V
Voltage, Drain To Source
-150 V
Voltage, Forward, Diode
-1.6 V
Voltage, Gate To Source
±20 V
Number Of Elements
1
Polarity
P
Channel Mode
Enhancement
Drain-source On-res
0.24Ohm
Drain-source On-volt
150V
Gate-source Voltage (max)
±20V
Continuous Drain Current
2.2A
Operating Temp Range
-55C to 150C
Operating Temperature Classification
Military
Mounting
Surface Mount
Pin Count
8
Configuration
Single Quad Drain Triple Source
Transistor Polarity
P-Channel
Resistance Drain-source Rds (on)
240 m Ohms
Drain-source Breakdown Voltage
- 150 V
Gate-source Breakdown Voltage
20 V
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Fall Time
26 ns
Gate Charge Qg
33 nC
Minimum Operating Temperature
- 55 C
Rise Time
15 ns
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Diode Characteristics
IRF6216PbF
Dynamic @ T
Avalanche Characteristics
Static @ T
V
∆V
R
V
I
g
Q
Q
Q
t
t
t
t
C
C
C
C
C
C
E
I
I
I
V
t
Q
I
DSS
GSS
AR
SM
d(on)
r
d(off)
f
S
rr
fs
AS
DS(on)
(BR)DSS
GS(th)
SD
g
gs
gd
iss
oss
rss
oss
oss
oss
rr
2
(BR)DSS
eff.
/∆T
J
Breakdown Voltage Temp. Coefficient
Drain-to-Source Breakdown Voltage
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Forward Transconductance
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Output Capacitance
Output Capacitance
Effective Output Capacitance
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse RecoveryCharge
J
= 25°C (unless otherwise specified)
J
Single Pulse Avalanche Energy
Avalanche Current
= 25°C (unless otherwise specified)
Parameter
Parameter
Parameter
Parameter
–––
-150
–––
-3.0
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Min. Typ. Max. Units
Min. Typ. Max. Units
2.7
Min. Typ. Max. Units
–––
–––
–––
–––
–––
-0.17
1280 –––
1290 –––
–––
––– 0.240
–––
–––
––– -250
–––
–––
220
220
–––
–––
310
––– -100
–––
7.2
80
33
15
18
15
33
26
53
99
–––
-5.0
100
–––
–––
–––
–––
–––
–––
–––
–––
–––
-1.6
120
460
-25
-2.2
–––
11
23
49
-19
µA
nA
nC
ns
nS
nC
V/°C
pF
Ω
V
V
S
V
Typ.
–––
–––
I
V
V
V
V
V
V
V
V
V
V
V
I
R
V
V
V
ƒ = 1.0MHz
V
V
V
MOSFET symbol
showing the
integral reverse
p-n junction diode.
T
T
di/dt = -100A/µs
D
D
Reference to 25°C, I
J
J
GS
GS
DS
DS
DS
GS
GS
DS
DS
GS
DD
GS
GS
DS
GS
GS
GS
G
= -1.3A
= -1.3A
= 25°C, I
= 25°C, I
= 6.5Ω
= 0V, I
= -10V, I
= V
= -150V, V
= -120V, V
= -20V
= 20V
= -50V, I
= -120V
= -10V,
= -75V
= -10V
= 0V
= -25V
= 0V, V
= 0V, V
= 0V, V
GS
, I
D
S
F
DS
D
DS
DS
Conditions
= -250µA
D
D
Conditions
Conditions
= -1.3A, V
= -1.3A
= -250µA
= -1.3A
= -1.3A
GS
GS
= 0V to -120V
Max.
= -1.0V, ƒ = 1.0MHz
= -120V, ƒ = 1.0MHz
200
-4.0
= 0V
= 0V, T
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D
= -1mA
GS
J
G
= 0V
= 125°C
Units
mJ
A
D
S