IXTY3N60P IXYS, IXTY3N60P Datasheet - Page 3

• Manufacturer Part Number: IXTY3N60P
• Description: MOSFET N-CH 600V 3A D-PAK
• Manufacturer: IXYS
• Series: PolarHV™r

Specifications of IXTY3N60P

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 2.9 Ohm @ 500mA, 10V
• Drain To Source Voltage (vdss): 600V
• Current - Continuous Drain (id) @ 25° C: 3A
• Vgs(th) (max) @ Id: 5.5V @ 50µA
• Gate Charge (qg) @ Vgs: 9.8nC @ 10V
• Input Capacitance (ciss) @ Vds: 411pF @ 25V
• Power - Max: 70W
• Mounting Type: Surface Mount
• Package / Case: DPak, TO-252 (2 leads+tab), SC-63
• Vdss, Max, (v): 600
• Id(cont), Tc=25°c, (a): 3.0
• Rds(on), Max, Tj=25°c, (?): 2.9
• Ciss, Typ, (pf): 411
• Qg, Typ, (nc): 9.8
• Trr, Typ, (ns): 500
• Pd, (w): 70
• Rthjc, Max, (k/w): 1.8
• Package Style: TO-252AA (D PAK)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

© 2006 IXYS All rights reserved
2.7
2.4
2.1
1.8
1.5
1.2
0.9
0.6
0.3
2.7
2.4
2.1
1.8
1.5
1.2
0.9
0.6
0.3
2.8
2.6
2.4
2.2
1.8
1.6
1.4
1.2
0.8
3
0
3
0
3
2
1
0
0
0
V
GS
1
2
Fig. 3. Output Characteristics
Fig. 5. R
Fig. 1. Output Characteristics
= 10V
1
2
4
0.5 I
V
3
6
GS
DS(on)
2
V
I
D25
D
D S
V
= 10V
V
4
@ 125
8
D S
- Amperes
8V
7V
GS
@ 25
Value vs. I
- Volts
Norm alized to
10
- Volts
6V
= 10V
5
3
8V
7V
º
º
6V
5V
C
C
12
6
T
J
4
14
D
= 125
7
T
J
= 25
16
8
º
C
5
º
18
C
9
10
20
6
3.3
2.7
2.4
2.1
1.8
1.5
1.2
0.9
0.6
0.3
5.5
4.5
3.5
2.5
1.5
0.5
3.1
2.8
2.5
2.2
1.9
1.6
1.3
0.7
0.4
3
0
6
5
4
3
2
1
0
1
-50
-50
Fig. 2. Extended Output Characteristics
0
Fig. 6. Drain Current vs. Case
Fig. 4. R
V
Value vs. Junction Tem perature
GS
3
-25
-25
IXTA 3N60P IXTP 3N60P
= 10V
6
T
Tem perature
0
DS(on
0
T
C
J
- Degrees Centigrade
9
- Degrees Centigrade
V
I
25
GS
)
25
D
Norm alized to 0.5 I
12
@ 25
V
= 3A
D S
= 10V
8V
15
50
50
- Volts
º
C
7V
6V
18
75
75
I
IXTY 3N60P
D
= 1.5A
21
100
100
24
D25
125
125
27
150
150
30