IRF7809AVTRPBF International Rectifier, IRF7809AVTRPBF Datasheet - Page 5

• Manufacturer Part Number: IRF7809AVTRPBF
• Description: MOSFET N-CH 30V 13.3A 8-SOIC
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRF7809AVTRPBF

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 9 mOhm @ 15A, 4.5V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 13.3A
• Vgs(th) (max) @ Id: 1V @ 250µA
• Gate Charge (qg) @ Vgs: 62nC @ 5V
• Input Capacitance (ciss) @ Vds: 3780pF @ 16V
• Power - Max: 2.5W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 9 mOhms
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: 12 V
• Continuous Drain Current: 13.3 A
• Power Dissipation: 2.5 W
• Mounting Style: SMD/SMT
• Gate Charge Qg: 41 nC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: IRF7809AVPBFTR; IRF7809AVTRPBF; IRF7809AVTRPBFTR

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16
12
0.01
100
8
4
0
0.1
10
0.00001
Fig 9. Maximum Drain Current Vs.
25
1
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
D = 0.50
0.20
0.10
0.05
0.02
0.01
50
Case Temperature
T , Case Temperature ( C)
C
(THERMAL RESPONSE)
0.0001
SINGLE PULSE
75
100
0.001
125
°
t , Rectangular Pulse Duration (sec)
1
150
0.01
Fig 10b. Switching Time Waveforms
Fig 10a. Switching Time Test Circuit
V
90%
10%
V
0.1
DS
GS
t
d(on)
1. Duty factor D = t / t
2. Peak T = P
Notes:
IRF7809AVPbF
t
r
1
≤ 0.1 %
J
≤ 1
DM
x Z
1
thJA
P
2
t
DM
d(off)
+ T
10
A
t
1
t
f
t
2
+
-
100
5