IRF6216TRPBF International Rectifier, IRF6216TRPBF Datasheet

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IRF6216TRPBF

Manufacturer Part Number
IRF6216TRPBF
Description
MOSFET P-CH 150V 2.2A 8-SOIC
Manufacturer
International Rectifier
Series
HEXFET®r
Datasheet

Specifications of IRF6216TRPBF

Package / Case
8-SOIC (3.9mm Width)
Mounting Type
Surface Mount
Power - Max
2.5W
Fet Type
MOSFET P-Channel, Metal Oxide
Gate Charge (qg) @ Vgs
49nC @ 10V
Vgs(th) (max) @ Id
5V @ 250µA
Current - Continuous Drain (id) @ 25° C
2.2A
Drain To Source Voltage (vdss)
150V
Fet Feature
Standard
Rds On (max) @ Id, Vgs
240 mOhm @ 1.3A, 10V
Transistor Polarity
P-Channel
Drain-source Breakdown Voltage
- 150 V
Gate-source Breakdown Voltage
20 V
Continuous Drain Current
- 2.2 A
Power Dissipation
2.5 W
Mounting Style
SMD/SMT
Gate Charge Qg
33 nC
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

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Manufacturer
Quantity
Price
Part Number:
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Manufacturer:
IR
Quantity:
20 000
Part Number:
IRF6216TRPBF
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Thermal Resistance
l
l
l
l
Absolute Maximum Ratings
www.irf.com
Applications
I
I
I
P
V
dv/dt
T
T
Notes  through
Benefits
Symbol
R
R
D
D
DM
J
STG
D
GS
@ T
@ T
JL
JA
Effective C
App. Note AN1001)
and Current
@T
Reset Switch for Active Clamp Reset
DC-DC converters
Low Gate to Drain Charge to Reduce
Fully Characterized Capacitance Including
Fully Characterized Avalanche Voltage
Switching Losses
A
A
A
= 25°C
= 70°C
= 25°C
OSS
Continuous Drain Current, V
Continuous Drain Current, V
Pulsed Drain Current 
Power Dissipation„
Linear Derating Factor
Gate-to-Source Voltage
Peak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Junction-to-Drain Lead
Junction-to-Ambient
to Simplify Design (See
are on page 8
Parameter
Parameter
SMPS MOSFET
GS
GS
@ 10V
@ 10V
G
S
S
S
V
-150V
DSS
1
2
3
4
T o p V ie w
Typ.
300 (1.6mm from case )
–––
–––
0.240 @V
HEXFET
-55 to + 150
8
6
5
7
R
Max.
0.02
-2.2
-1.9
± 20
DS(on)
-19
2.5
7.8
D
D
D
D
A
IRF6216
®
GS
Power MOSFET
max
Max.
20
50
=-10V -2.2A
SO-8
PD - 94297
Units
Units
W/°C
°C/W
I
V/ns
D
°C
W
A
V
1
02/12/02

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IRF6216TRPBF Summary of contents

Page 1

Applications l Reset Switch for Active Clamp Reset DC-DC converters Benefits Low Gate to Drain Charge to Reduce l Switching Losses Fully Characterized Capacitance Including l Effective C to Simplify Design (See OSS App. Note AN1001) Fully Characterized Avalanche Voltage ...

Page 2

IRF6216 Static @ T = 25°C (unless otherwise specified) J Parameter V Drain-to-Source Breakdown Voltage (BR)DSS Breakdown Voltage Temp. Coefficient (BR)DSS J R Static Drain-to-Source On-Resistance DS(on) V Gate Threshold Voltage GS(th) I Drain-to-Source Leakage Current DSS ...

Page 3

VGS TOP -15V -12V -10V -8.0V -7.0V 10 BOTTOM 1 0.1  20µs PULSE WIDTH 0.01 0 Fig 1. Typical Output Characteristics 100  ° ...

Page 4

IRF6216 10000 0V, C iss = rss = oss = Ciss 1000 Coss 100 Crss ...

Page 5

T , Case Temperature ( C) C Fig 9. Maximum Drain Current Vs. Ambient Temperature 100 D = 0.50 0.20 10 0.10 0.05 0.02 1 0.01  SINGLE PULSE ...

Page 6

IRF6216 0.23 0. -10V 0.21 0.20 0. Fig 12. On-Resistance Vs. Drain Current Current Regulator Same Type as D.U. 50K . 12V . ...

Page 7

SO-8 Package Details (. ...

Page 8

IRF6216 SO-8 Tape and Reel 8.1 ( .318 ) 7.9 ( .312 ) ING DIM E NSIO ...

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