IXTA6N50P IXYS, IXTA6N50P Datasheet - Page 4

• Manufacturer Part Number: IXTA6N50P
• Description: MOSFET N-CH 500V 6A D2-PAK
• Manufacturer: IXYS
• Series: PolarHV™r

Specifications of IXTA6N50P

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 1.1 Ohm @ 500mA, 10V
• Drain To Source Voltage (vdss): 500V
• Current - Continuous Drain (id) @ 25° C: 6A
• Vgs(th) (max) @ Id: 5V @ 50µA
• Gate Charge (qg) @ Vgs: 14.6nC @ 10V
• Input Capacitance (ciss) @ Vds: 740pF @ 25V
• Power - Max: 100W
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 1.1 Ohms
• Forward Transconductance Gfs (max / Min): 5.5 s
• Drain-source Breakdown Voltage: 500 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 6 A
• Power Dissipation: 100 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Vdss, Max, (v): 500
• Id(cont), Tc=25°c, (a): 6.0
• Rds(on), Max, Tj=25°c, (?): 1.1
• Ciss, Typ, (pf): 740
• Qg, Typ, (nc): 14.6
• Trr, Typ, (ns): 400
• Pd, (w): 100
• Rthjc, Max, (k/w): 1.25
• Package Style: TO-263
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

IXYS reserves the right to change limits, test conditions, and dimensions.
10000
1000
100
18
16
14
12
10
10
8
6
4
2
0
8
7
6
5
4
3
2
1
0
1
0.4
4
0
f = 1MH z
5
0.5
4.5
Fig. 11. Capacitance
Fig. 7. Input Adm ittance
Fig. 9. Source Cur r e nt vs .
Sour ce -To-Dr ain V oltage
T
J
10
= 125
T
J
-40
0.6
25
= 125
V
V
15
º
º
5
º
V
C
C
C
G S
S D
D S
º
C
- V olts
- V olts
0.7
20
- V olts
5.5
25
0.8
C iss
C oss
C rss
6
30
T
J
= 25
0.9
35
º
6.5
C
40
1
100
0.1
10
10
10
1
9
8
7
6
5
4
3
2
1
0
9
8
7
6
5
4
3
2
1
0
10
0
0
R
T
J
DS(on)
= -40
V
I
I
125
D
G
1
DS
2
Fig. 8. Tr ans conductance
25
= 3A
= 10m A
º
º
º
= 250V
Lim it
C
C
C
Fig. 10. Gate Char ge
Fig. 12. For w ar d-Bias
Safe Ope r ating Ar e a
2
4
Q
G
I
3
6
D
- nanoCoulombs
V
- A mperes
D S
D C
100
- V olts
4
8
IXTP 6N50P
IXTA 6N50P
10
5
T
T
J
C
12
6
= 1 50
= 25
º
º
14
C
C
7
1 00µs
1 m s
25µs
1 0m s
1000
16
8