IXTP2R4N50P IXYS, IXTP2R4N50P Datasheet - Page 4

• Manufacturer Part Number: IXTP2R4N50P
• Description: MOSFET N-CH 500V 2.4A TO-220
• Manufacturer: IXYS
• Series: PolarHV™r

Specifications of IXTP2R4N50P

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 3.75 Ohm @ 500mA, 10V
• Drain To Source Voltage (vdss): 500V
• Current - Continuous Drain (id) @ 25° C: 2.4A
• Vgs(th) (max) @ Id: 5.5V @ 25µA
• Gate Charge (qg) @ Vgs: 6.1nC @ 10V
• Input Capacitance (ciss) @ Vds: 240pF @ 25V
• Power - Max: 55W
• Mounting Type: Through Hole
• Package / Case: TO-220
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 3.75 Ohms
• Forward Transconductance Gfs (max / Min): 2.5 s
• Drain-source Breakdown Voltage: 500 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 2.4 A
• Power Dissipation: 55 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Vdss, Max, (v): 500
• Id(cont), Tc=25°c, (a): 2.4
• Rds(on), Max, Tj=25°c, (?): 3.75
• Ciss, Typ, (pf): 240
• Qg, Typ, (nc): 6.1
• Trr, Typ, (ns): 400
• Pd, (w): 55
• Rthjc, Max, (k/w): 2.25
• Package Style: TO-220
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

IXYS reserves the right to change limits, test conditions, and dimensions.
1000
100
3.5
2.5
1.5
0.5
10
1
3
2
1
0
7
6
5
4
3
2
1
0
0.4
0
4
f = 1MH z
5
4.5
0.5
Fig. 11. Capacitance
Fig. 7. Input Adm ittance
Fig. 9. Source Cur re nt vs .
Source -To-Drain V oltage
T
10
T
J
J
= 125
= 125
-40
25
5
0.6
V
15
V
V
º
º
º
G S
º
S D
C
C
C
D S
C
- V olts
- V olts
5.5
20
- V olts
0.7
25
6
0.8
C is s
C os s
C rs s
30
T
J
6.5
= 25
35
0.9
º
C
40
7
0.1
3.5
2.5
1.5
0.5
10
10
1
4
3
2
1
0
9
8
7
6
5
4
3
2
1
0
10
0
0
R
T
T
T
J
DS(on)
J
C
= -40
V
I
I
D
G
125
0.5
= 1 50
DS
= 25
Fig. 8. Tr ans conductance
25
= 1.2A
= 10m A
1
º
º
º
= 250V
Lim it
C
º
C
º
C
Fig. 10. Gate Charge
Fig. 12. Forw ar d-Bias
C
C
Safe Ope r ating Are a
1
2
Q
G
1.5
I
- nanoCoulombs
V
D
D S
- A mperes
3
D C
100
- V olts
2
4
IXTY 2R4N50P
IXTP 2R4N50P
2.5
5
3
6
3.5
1 m s
1 00µs
1 0m s
25µs
1000
7
4