IRF9317PBF International Rectifier, IRF9317PBF Datasheet - Page 5

• Manufacturer Part Number: IRF9317PBF
• Description: MOSFET P-CH 30V 16A SO-8
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRF9317PBF

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 6.6 mOhm @ 16A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 16A
• Vgs(th) (max) @ Id: 2.4V @ 50µA
• Gate Charge (qg) @ Vgs: 92nC @ 10V
• Input Capacitance (ciss) @ Vds: 2820pF @ 15V
• Power - Max: 2.5W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Transistor Polarity: P-Channel
• Resistance Drain-source Rds (on): 10.2 mOhms
• Drain-source Breakdown Voltage: - 30 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: - 16 A
• Power Dissipation: 2.5 W
• Mounting Style: SMD/SMT
• Gate Charge Qg: 31 nC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

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Fig 14. Maximum Avalanche Energy vs. Drain Current

1400
1200
1000
‚
800
600
400
200
+
Fig 12. On-Resistance vs. Gate Voltage
18
16
14
12
10
-
8
6
4
0
2
25
D.U.T
T J = 25°C
4
Starting T J , Junction Temperature (°C)
Fig 17.
-V GS, Gate -to -Source Voltage (V)
*
50
6
ƒ
+
-
•
•
•
•
8
SD
T J = 125°C
75
10
•
•
•
12
100
TOP
BOTTOM -13A
-
14
G
„
I D = -13A
16
125
+
I D
-1.5A
-2.3A
18
20
150
+
-
Re-Applied
Voltage
Reverse
Recovery
Current
for P-Channel HEXFET
Fig 13. Typical On-Resistance vs. Drain Current
Driver Gate Drive
D.U.T. I
D.U.T. V
Inductor Curent
1000
800
600
400
200
P.W.
20
16
12
SD
0
DS
8
4
1E-5
Waveform
Waveform
0 10 20 30 40 50 60 70 80 90 100110120
Fig 16. Typical Power vs. Time
Ripple ≤ 5%
Body Diode
Period
Body Diode Forward
1E-4
Diode Recovery
Current
-I D , Drain Current (A)
dv/dt
Forward Drop
1E-3
di/dt
Time (sec)
®
Power MOSFETs
V GS = -4.5V
D =
1E-2
Period
P.W.
V GS = -10V
1E-1
V
V
I
SD
GS
DD
=10V
1E+0
5