IRFR5410TRRPBF International Rectifier, IRFR5410TRRPBF Datasheet - Page 4
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IRFR5410TRRPBF
Manufacturer Part Number
IRFR5410TRRPBF
Description
MOSFET P-CH 100V 13A DPAK
Manufacturer
International Rectifier
Series
HEXFET®r
Datasheet
1.IRFR5410TRPBF.pdf
(11 pages)
Specifications of IRFR5410TRRPBF
Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
205 mOhm @ 7.8A, 10V
Drain To Source Voltage (vdss)
100V
Current - Continuous Drain (id) @ 25° C
13A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
58nC @ 10V
Input Capacitance (ciss) @ Vds
760pF @ 25V
Power - Max
66W
Mounting Type
Surface Mount
Package / Case
DPak, TO-252 (2 leads+tab), SC-63
Transistor Polarity
P Channel
Continuous Drain Current Id
-13A
Drain Source Voltage Vds
-100V
On Resistance Rds(on)
205mohm
Rds(on) Test Voltage Vgs
-10V
Peak Reflow Compatible (260 C)
Yes
Rohs Compliant
Yes
Configuration
Single
Resistance Drain-source Rds (on)
205 m Ohms
Drain-source Breakdown Voltage
- 100 V
Gate-source Breakdown Voltage
20 V
Continuous Drain Current
13 A
Power Dissipation
66 W
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Fall Time
46 ns
Gate Charge Qg
38.7 nC
Minimum Operating Temperature
- 55 C
Rise Time
58 ns
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
4
2000
1600
1200
800
400
100
0.1
10
0
1
0.2
1
-V
-V
SD
DS
T = 150 C
0.8
,Source-to-Drain Voltage (V)
V
C
C
C
J
, Drain-to-Source Voltage (V)
GS
iss
rss
oss
C
C
C
rss
iss
oss
T = 25 C
= 0V,
= C
= C
= C
J
°
gs
gd
ds
1.4
°
+ C
+ C
10
gd
gd
f = 1MHz
, C
ds
2.0
V
GS
SHORTED
= 0 V
2.6
100
A
20
15
10
1000
5
0
100
10
0
1
I =
D
1
T
T
Single Pulse
C
J
-8.4A
= 25 C
= 150 C
10
OPERATION IN THIS AREA LIMITED
-V
Q , Total Gate Charge (nC)
DS
G
°
°
, Drain-to-Source Voltage (V)
20
10
BY R
V
V
V
30
DS
DS
DS
DS(on)
FOR TEST CIRCUIT
= -80V
= -50V
= -20V
SEE FIGURE
40
www.irf.com
100
10us
100us
1ms
10ms
50
13
1000
60