IRF7807VD2TRPBF International Rectifier, IRF7807VD2TRPBF Datasheet - Page 2

• Manufacturer Part Number: IRF7807VD2TRPBF
• Description: MOSFET N-CH 30V 8.3A 8-SOIC
• Manufacturer: International Rectifier
• Series: FETKY™r

Specifications of IRF7807VD2TRPBF

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Diode (Isolated)
• Rds On (max) @ Id, Vgs: 25 mOhm @ 7A, 4.5V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 8.3A
• Vgs(th) (max) @ Id: 1V @ 250µA
• Gate Charge (qg) @ Vgs: 14nC @ 4.5V
• Power - Max: 2.5W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 25 mOhms
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 8.3 A
• Power Dissipation: 2.5 W
• Mounting Style: SMD/SMT
• Gate Charge Qg: 9.5 nC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: IRF7807VD2PBFTR; IRF7807VD2TRPBF; IRF7807VD2TRPBFTR

Schottky Diode & Body Diode Ratings and Characteristics
IRF7807VD2PbF
Electrical Characteristics
Notes:
Parameter
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn-On Time
Parameter
Drain-to-Source
Breakdown Voltage
Static Drain-Source
on Resistance
Gate Threshold Voltage
Drain-Source Leakage
Current
Current*
Gate-Source Leakage
Current*
Total Gate Charge*
Pre-Vth
Gate-Source Charge
Post-Vth
Gate-Source Charge
Gate to Drain Charge
Switch Chg(Q
Output Charge*
Gate Resistance
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
2

‚
ƒ
„
…
*
measured at V
Typical values of R
Device are 100% tested to these parameters.
Repetitive rating; pulse width limited by max. junction temperature.
Pulse width ≤ 400 µs; duty cycle ≤ 2%.
When mounted on 1 inch square copper board
50% Duty Cycle, Rectangular
gs2
+ Q
gd
)
GS
= 5.0V, I
DS
V
(on) measured at V
BV
R
I
I
Q
Q
Q
Q
Q
Q
R
t
t
t
t
DSS
GSS
d (on)
r
d (off)
f
GS(th)
DS
G
G
GS1
GS2
GD
sw
oss
DSS
F
(on)
= 7.0A.
Min
1.0
V
30
Qrr
trr
t
on
SD
Typ
9.5
2.3
1.0
2.4
3.4
2.0
6.3
1.2
2.2
17
12
11
GS
–
Intrinsic turn-on time is negligible (turn-on is dominated by L
= 4.5V, Q
Min
±100
16.8
Max
6.0
5.2
25
50
14
–
G
, Q
Units
SW
m
mA
nC
µA
nA
ns
Typ
Ω
V
V
36
41
Ω
and Q
OSS
V
V
V
V
V
V
V
V
V
Resistive Load
V
Conditions
V
GS
GS
DS
DS
DS
Tj = 100°C
GS
DS
DS
DD
0.54
0.43
Max
GS
GS
=4.5V, I
= V
= 24V, V
= 24V, V
= 16V, V
= 0V, I
= 4.5V, I
= 16V
= 16V, I
= 5V, R
= ±20V
GS
,I
D
D
Units
D
D
= 250µA
= 250µA
nC
D
GS
GS
GS
ns
G
=7.0A
V
= 7.0A
= 2
= 7.0A‚
= 0
= 0,
= 0
Ω
T
T
T
di/dt = 100A/µs
j
j
j
= 25°C, I
= 125°C, I
= 25°C, I
Conditions
s
s
= 3.0A, V
s
= 7.0A, V
= 3.0A, V
www.irf.com
S
+L
GS
DS
GS
=0V
D
= 16V
)
=0V
‚
‚