IXTY2R4N50P IXYS, IXTY2R4N50P Datasheet - Page 5

• Manufacturer Part Number: IXTY2R4N50P
• Description: MOSFET N-CH 500V 2.4A DPAK
• Manufacturer: IXYS
• Series: PolarHV™r

Specifications of IXTY2R4N50P

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 3.75 Ohm @ 500mA, 10V
• Drain To Source Voltage (vdss): 500V
• Current - Continuous Drain (id) @ 25° C: 2.4A
• Vgs(th) (max) @ Id: 5.5V @ 25µA
• Gate Charge (qg) @ Vgs: 6.1nC @ 10V
• Input Capacitance (ciss) @ Vds: 240pF @ 25V
• Power - Max: 55W
• Mounting Type: Surface Mount
• Package / Case: DPak, TO-252 (2 leads+tab), SC-63
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 3.75 Ohms
• Forward Transconductance Gfs (max / Min): 2.5 s
• Drain-source Breakdown Voltage: 500 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 2.4 A
• Power Dissipation: 55 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Vdss, Max, (v): 500
• Id(cont), Tc=25°c, (a): 2.4
• Rds(on), Max, Tj=25°c, (?): 3.75
• Ciss, Typ, (pf): 240
• Qg, Typ, (nc): 6.1
• Trr, Typ, (ns): 400
• Pd, (w): 55
• Rthjc, Max, (k/w): 2.25
• Package Style: TO-252AA (D PAK)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

IXTP 2R4N50P
IXTY 2R4N50P
Fig. 13. M axim um Trans ie nt The rm al Re s is tance
10.00
1.00
0.10
0.01
0.00001
0.0001
0.001
0.01
0.1
1
10
Pulse Width - Seconds
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