IRF7342D2PBF International Rectifier, IRF7342D2PBF Datasheet - Page 8

• Manufacturer Part Number: IRF7342D2PBF
• Description: MOSFET P-CH 55V 3.4A 8-SOIC
• Manufacturer: International Rectifier
• Series: FETKY™r

Specifications of IRF7342D2PBF

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Diode (Isolated)
• Rds On (max) @ Id, Vgs: 105 mOhm @ 3.4A, 10V
• Drain To Source Voltage (vdss): 55V
• Current - Continuous Drain (id) @ 25° C: 3.4A
• Vgs(th) (max) @ Id: 1V @ 250µA
• Gate Charge (qg) @ Vgs: 38nC @ 10V
• Input Capacitance (ciss) @ Vds: 690pF @ 25V
• Power - Max: 2W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Transistor Polarity: P-Channel
• Resistance Drain-source Rds (on): 170 mOhms
• Drain-source Breakdown Voltage: - 55 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: - 3.4 A
• Power Dissipation: 2 W
• Mounting Style: SMD/SMT
• Gate Charge Qg: 26 nC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: *IRF7342D2PBF

IRF7342D2PbF
8
100
Fig. 17 - Maximum Forward Voltage Drop
10
1
0
0.4
Forward Voltage Drop - V
0.8
Characteristics
1.2
1.6
Schottky Diode Characteristics
T = 150°C
T = 125°C
T = 25°C
J
J
J
2
FM
(V)
2.4
2.8
0.001
1000
0.01
100
100
Reverse Current Vs. Reverse Voltage
0.1
10
10
1
Fig. 19 - Typical Junction Capacitance
0
0
Fig. 18 - Typical Values of
T = 150°C
J
10
10
Vs. Reverse Voltage
125°C
100°C
Reverse Voltage - V (V)
Reverse Voltage - V
75°C
50°C
25°C
20
20
T = 25°C
J
30
30
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40
40
R
R
(V)
50
50
60
60