IRF7406PBF International Rectifier, IRF7406PBF Datasheet - Page 3

• Manufacturer Part Number: IRF7406PBF
• Description: MOSFET P-CH 30V 5.8A 8-SOIC
• Manufacturer: International Rectifier
• Series: HEXFET®r
• Type: Power MOSFETr

Specifications of IRF7406PBF

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 45 mOhm @ 2.8A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 5.8A
• Vgs(th) (max) @ Id: 1V @ 250µA
• Gate Charge (qg) @ Vgs: 59nC @ 10V
• Input Capacitance (ciss) @ Vds: 1100pF @ 25V
• Power - Max: 2.5W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Number Of Elements: 1
• Polarity: P
• Channel Mode: Enhancement
• Drain-source On-res: 0.045Ohm
• Drain-source On-volt: 30V
• Gate-source Voltage (max): ±20V
• Continuous Drain Current: 5.8A
• Power Dissipation: 2.5W
• Operating Temp Range: -55C to 150C
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Pin Count: 8
• Package Type: SOIC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

www.irf.com
1000
1000
100
100
10
10
1
0.1
4
TOP
BOTTOM - 4.5V
-V
-V
5
- 15V
- 10V
- 8.0V
- 7.0V
- 6.0V
- 5.5V
- 5.0V
GS
VGS
DS
, Gate-to-Source Voltage (V)
, Drain-to-Source Voltage (V)
6
1
7
V
20µs PULSE WIDTH
20µs PULSE WIDTH
T = 25°C
DS
J
T = 25°C
-4.5V
T = 150°C
J
J
= -15V
10
8
9
100
10
A
A
1000
100
2.0
1.5
1.0
0.5
0.0
10
1
0.1
-60
TOP
BOTTOM - 4.5V
I
D
-40
= -4.7A
T , Junction Temperature (°C)
-V
-20
- 15V
- 10V
- 8.0V
- 7.0V
- 6.0V
- 5.5V
- 5.0V
J
VGS
DS
, Drain-to-Source Voltage (V)
0
1
20
40
60
20µs PULSE WIDTH
T = 150°C
-4.5V
J
80
10
100 120 140 160
V
GS
= -10V
100
3
A
A