CPC5602C Clare, CPC5602C Datasheet

MOSFET N-CH 350V 5MA SOT-223

CPC5602C

Manufacturer Part Number
CPC5602C
Description
MOSFET N-CH 350V 5MA SOT-223
Manufacturer
Clare
Datasheets

Specifications of CPC5602C

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Depletion Mode
Rds On (max) @ Id, Vgs
14 Ohm @ 50mA, 350mV
Drain To Source Voltage (vdss)
350V
Current - Continuous Drain (id) @ 25° C
5mA
Input Capacitance (ciss) @ Vds
300pF @ 0V
Power - Max
2.5W
Mounting Type
Surface Mount
Package / Case
SOT-223 (3 leads + Tab), SC-73, TO-261
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
14 Ohms
Continuous Drain Current
5 mA
Power Dissipation
2.5 W
Maximum Operating Temperature
+ 85 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 40 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Gate Charge (qg) @ Vgs
-
Vgs(th) (max) @ Id
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant

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Features
Applications
DS-CPC5602-R05
Parameter
Drain-to-Source Voltage (V
Max On-Resistance (R
Max Power
350V Drain-to-Source Voltage
Low On-resistance: 8 Ohms (Typical)
High input impedance
Low input and output leakage
Small package size SOT-223
PC Card (PCMCIA) Compatible
PCB Space and Cost Savings
Support Component for LITELINK™
Data Access Arrangement (DAA)
Telecommunications
Pb
2002/95/EC
RoHS
on-max
DS
)
e
)
3
Rating
350
2.5
14
Units
Ω
W
V
www.clare.com
www.clare.com
The CPC5602 is an “N” channel depletion mode Field
Effect Transistor (FET) that utilizes Clare’s proprietary
third generation vertical DMOS process. The third
generation process realizes world class, high voltage
MOSFET performance in an economical silicon gate
process. The vertical DMOS process yields a highly
reliable device, particularly in difficult application
environments such as telecommunications.
One of the primary applications for the CPC5602 is
as a linear regulator/hook switch for the LITELINK
family of Data Access Arrangements (DAA) Devices
CPC5610A, CPC5611A, CPC5620A, CPC5621A,
and CPC5622A.
The CPC5602 has a typical on-resistance of 8Ω, a
drain-to-source voltage of 350V, and is available in
an SOT-223 package. As with all MOS devices, the
FET structure prevents thermal runaway and thermal-
induced secondary breakdown.
Description
Ordering Information
Part Number
CPC5602C
CPC5602CTR
N Channel Depletion Mode FET
Pin Number
Package Pinout
Description
N-Channel Depletion Mode FET, SOT-223
Package (80/tube)
N-Channel Depletion Mode FET, SOT-223
Package Tape and Reel (1000/reel)
1
2
3
4
G
1
D
D
4
2
SOURCE
DRAIN
DRAIN
Name
S
GATE
3
CPC5602
1

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CPC5602C Summary of contents

Page 1

... SOT-223 package. As with all MOS devices, the FET structure prevents thermal runaway and thermal- induced secondary breakdown. Ordering Information Part Number CPC5602C CPC5602CTR www.clare.com www.clare.com CPC5602 N Channel Depletion Mode FET Description N-Channel Depletion Mode FET, SOT-223 ...

Page 2

... V =10V, V =100V GS(off -5V, V =190V DS(off -5V, V =350V -2.7V, V =5V, V =50V -0.57V -0.35V, I =50mA DS(on =10V, V =-10V GSS =0V ISS DS GS Symbol Conditions R - θJC www.clare.com Min Typ Max Units - μ 130 - - mA Ω μ 0 300 pF Min Typ Max Units - - 14 ºC/W R05 ...

Page 3

... The products described in this document are not designed, intended, authorized or warranted for use as components in systems intended for surgical implant into the body other applications intended to support or sustain life, or where malfunction of Clare’s product may result in direct physical harm, injury, or death to a person or severe property or environmental damage. Clare, Inc ...

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