SI4435DYPBF International Rectifier, SI4435DYPBF Datasheet - Page 4

• Manufacturer Part Number: SI4435DYPBF
• Description: MOSFET P-CH 30V 8A 8-SOIC
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of SI4435DYPBF

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 20 mOhm @ 8A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 8A
• Vgs(th) (max) @ Id: 1V @ 250µA
• Gate Charge (qg) @ Vgs: 60nC @ 10V
• Input Capacitance (ciss) @ Vds: 2320pF @ 15V
• Power - Max: 2.5W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Channel Type: P
• Current, Drain: -8 A
• Gate Charge, Total: 40 nC
• Package Type: SO-8
• Polarization: P-Channel
• Power Dissipation: 2.5 W
• Resistance, Drain To Source On: 0.015 Ohm
• Temperature, Operating, Maximum: +150 °C
• Temperature, Operating, Minimum: -55 °C
• Time, Turn-off Delay: 130 ns
• Time, Turn-on Delay: 16 ns
• Transconductance, Forward: 11 S
• Voltage, Breakdown, Drain To Source: -30 V
• Voltage, Drain To Source: -30 V
• Voltage, Forward, Diode: -1.2 V
• Voltage, Gate To Source: ±20 V
• Configuration: Single Quad Drain Triple Source
• Transistor Polarity: P-Channel
• Resistance Drain-source Rds (on): 35 mOhms
• Drain-source Breakdown Voltage: - 30 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: - 8 A
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Fall Time: 31 ns
• Gate Charge Qg: 40 nC
• Minimum Operating Temperature: - 55 C
• Rise Time: 17 ns
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Si4435DYPbF
4
100
0.1
10
3500
3000
2500
2000
1500
1000
1
500
0.4
0
Fig 5. Typical Capacitance Vs.
Fig 7. Typical Source-Drain Diode
T = 150 C
1
J
Drain-to-Source Voltage
-V
SD
0.6
-V
°
DS
,Source-to-Drain Voltage (V)
Forward Voltage
V
C
C
C
, Drain-to-Source Voltage (V)
GS
iss
rss
oss
C oss
C iss
C rss
0.8
=
=
=
=
0V,
C
C
C
T = 25 C
J
gs
gd
ds
+ C
+ C
10
1.0
°
f = 1MHz
gd ,
gd
C
ds
V
1.2
GS
SHORTED
= 0 V
1.4
100
1000
100
10
Fig 8. Maximum Safe Operating Area
20
16
12
1
8
4
0
0.1
0
Fig 6. Typical Gate Charge Vs.
T
T
Single Pulse
I =
D
A
J
= 25 C
= 150 C
OPERATION IN THIS AREA LIMITED
-V
Gate-to-Source Voltage
-4.6A
10
DS
°
Q , Total Gate Charge (nC)
°
G
, Drain-to-Source Voltage (V)
1
20
BY R
30
DS(on)
V
DS
=-15V
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10
40
100us
1ms
10ms
50
100
60