IRF7322D1PBF International Rectifier, IRF7322D1PBF Datasheet

MOSFET P-CH 20V 5.3A 8-SOIC

IRF7322D1PBF

Manufacturer Part Number
IRF7322D1PBF
Description
MOSFET P-CH 20V 5.3A 8-SOIC
Manufacturer
International Rectifier
Series
FETKY™r
Datasheet

Specifications of IRF7322D1PBF

Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Diode (Isolated)
Rds On (max) @ Id, Vgs
62 mOhm @ 2.9A, 4.5V
Drain To Source Voltage (vdss)
20V
Current - Continuous Drain (id) @ 25° C
5.3A
Vgs(th) (max) @ Id
700mV @ 250µA
Gate Charge (qg) @ Vgs
29nC @ 4.5V
Input Capacitance (ciss) @ Vds
780pF @ 15V
Power - Max
2W
Mounting Type
Surface Mount
Package / Case
8-SOIC (3.9mm Width)
Configuration
Single Dual Drain
Transistor Polarity
P-Channel
Resistance Drain-source Rds (on)
62 mOhms
Drain-source Breakdown Voltage
- 20 V
Gate-source Breakdown Voltage
12 V
Continuous Drain Current
- 5.3 A
Power Dissipation
2 W
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Fall Time
49 ns
Gate Charge Qg
19 nC
Minimum Operating Temperature
- 55 C
Rise Time
40 ns
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

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Part Number
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Quantity
Price
Part Number:
IRF7322D1PBF
Quantity:
4 606
Description
Absolute Maximum Ratings (T
Thermal Resistance Ratings
Notes:
À
Á
Â
Ã
www.irf.com
l
The FETKY family of co-packaged MOSFETs and Schottky diodes offers the
designer an innovative, board space saving solution for switching regulator
and power management applications. Generation 5 HEXFET Power
MOSFETs utilize advanced processing techniques to achieve extremely low
on-resistance per silicon area. Combinining this technology with
International Rectifier's low forward drop Schottky rectifiers results in an
extremely efficient device suitable for use in a wide variety of portable
electronics applications.
The SO-8 has been modified through a customized leadframe for
enhanced thermal characteristics. The SO-8 package is designed for vapor
phase, infrared or wave soldering techniques.
l
l
l
l
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Parameter
R
Parameter
I
I
I
P
P
V
dv/dt
T
D
D
DM
θJA
D
D
GS
J,
Repetitive rating; pulse width limited by maximum junction temperature (see figure 9)
I
Pulse width ≤ 300µs; duty cycle ≤ 2%
Surface mounted on FR-4 board, t ≤ 10sec
Lead-Free
Co-packaged HEXFET
and Schottky Diode
Ideal For Buck Regulator Applications
P-Channel HEXFET
Low V
Generation 5 Technology
SO-8 Footprint
@ T
@ T
SD
T
@T
@T
STG
≤ -2.9A, di/dt ≤ -77A/µs, V
A
A
A
A
= 25°C
= 70°C
= 25°C
= 70°C
F
Schottky Rectifier
Continuous Drain Current, V
Pulsed Drain Current À
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Peak Diode Recovery dv/dt Á
Junction and Storage Temperature Range
Junction-to-Ambient
DD
®
≤ V
Power MOSFET
(BR)DSS
A
, T
= 25°C unless otherwise noted)
J
≤ 150°C
Ã
GS
@ -4.5V
A
S
G
A
FETKY
1
2
3
4
Top View
IRF7322D1PbF
ä
MOSFET / Schottky Diode
8
7
6
5
-55 to +150
Maximum
K
K
D
D
± 12
Maximum
-5.3
-4.3
-5.0
-43
2.0
1.3
16
62.5
Schottky Vf = 0.39V
R
DS(on)
V
DSS
SO-8
PD - 95298
= 0.058Ω
= -20V
Units
mW/°C
°C/W
Units
V/ns
°C
W
V
A
1
10/12/04

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IRF7322D1PBF Summary of contents

Page 1

... Repetitive rating; pulse width limited by maximum junction temperature (see figure 9) Á ≤ -2.9A, di/dt ≤ -77A/µs, V ≤ Â Pulse width ≤ 300µs; duty cycle ≤ 2% Ã Surface mounted on FR-4 board, t ≤ 10sec www.irf.com IRF7322D1PbF FETKY Power MOSFET Top View = 25° ...

Page 2

... IRF7322D1PbF MOSFET Electrical Characteristics @ T Parameter V Drain-to-Source Breakdown Voltage (BR)DSS R Static Drain-to-Source On-Resistance DS(on) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-to-Source Leakage Current DSS I Gate-to-Source Forward Leakage GSS Gate-to-Source Reverse Leakage Q Total Gate Charge g Q Gate-to-Source Charge gs Q Gate-to-Drain ("Miller") Charge ...

Page 3

... PULSE WIDTH ° 0 2.0 1 150 C ° J 1.0 0 -10V DS 20µs PULSE WIDTH 0.0 3.5 4.0 4.5 5.0 IRF7322D1PbF VGS TOP -7.50V -4.50V -4.00V -3.50V -3.00V -2.70V -2.00V BOTTOM -1.50V -1.50V 1 20µs PULSE WIDTH ° 150 Drain-to-Source Voltage ( ...

Page 4

... IRF7322D1PbF 1400 1MHz iss 1200 rss oss ds gd 1000 C iss 800 C oss 600 400 C rss 200 Drain-to-Source Voltage (V) DS 100 ° 150 0.1 0.2 0.4 0.6 0.8 -V ,Source-to-Drain Voltage ( Power Mosfet Characteristics SHORTED 100 0 100 10 ° Single Pulse 0.1 1.0 1 ...

Page 5

... Drain Current (A) D Fig 10. Typical On-Resistance Vs. Drain Current www.irf.com Power Mosfet Characteristics 0.01 0 Rectangular Pulse Duration (sec) 1 0.08 0.07 = -2.7V 0.06 0.05 0. -4. 0.0 Fig 11. Typical On-Resistance Vs. Gate IRF7322D1PbF Notes: 1. Duty factor Peak thJA -5.3A D 2.0 4.0 6 Gate-to-Source Voltage (V) GS ...

Page 6

... IRF7322D1PbF Schottky Diode Characteristics 10 1 0.1 0.0 0.2 0.4 0.6 Forward Voltage Drop - V Forward Voltage Drop - 150° 125° 25°C J 0.8 1.0 (V) FM (V) F Fig.14 - Maximum Allowable Ambient T = 50°C J 25°C 00°C 75°C 50°C 25° Reverse Voltage - V (V) 160 ...

Page 7

... SO-8 (Fetky) Part Marking Information EXAMPLE: T HIS IS AN IRF7807D1 (FET KY) www.irf.com 0.25 [.010 0.10 [.004 1.27 [.050] XXXX INTERNAT IONAL 807D1 RECT IFIER LOGO IRF7322D1PbF INCHES MILLIMET ERS DIM MIN MAX MIN MAX A .0532 .0688 1.35 1.75 A1 .0040 .0098 0.10 0.25 b .013 .020 0.33 ...

Page 8

... IRF7322D1PbF SO-8 Tape and Reel Dimensions are shown in milimeters (inches) NOTES: 1. CONTROLLING DIMENSION : MILLIMETER. 2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES). 3. OUTLINE CONFORMS TO EIA-481 & EIA-541. NOTES : 1. CONTROLLING DIMENSION : MILLIMETER. 2. OUTLINE CONFORMS TO EIA-481 & EIA-541. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 ...

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