IRF7433TRPBF International Rectifier, IRF7433TRPBF Datasheet

IRF7433TRPBF

Manufacturer Part Number

IRF7433TRPBF

Description

MOSFET P-CH 12V 8.9A 8-SOIC

Manufacturer

International Rectifier

Series

HEXFET®r

Datasheet

1.IRF7433TRPBF.pdf (9 pages)

Specifications of IRF7433TRPBF

Fet Type

MOSFET P-Channel, Metal Oxide

Fet Feature

Logic Level Gate

Rds On (max) @ Id, Vgs

24 mOhm @ 8.7A, 4.5V

Drain To Source Voltage (vdss)

12V

Current - Continuous Drain (id) @ 25° C

8.9A

Vgs(th) (max) @ Id

900mV @ 250µA

Gate Charge (qg) @ Vgs

20nC @ 4.5V

Input Capacitance (ciss) @ Vds

1877pF @ 10V

Power - Max

2.5W

Mounting Type

Surface Mount

Package / Case

8-SOIC (3.9mm Width)

Transistor Polarity

P-Channel

Resistance Drain-source Rds (on)

24 mOhms

Drain-source Breakdown Voltage

- 12 V

Gate-source Breakdown Voltage

8 V

Continuous Drain Current

- 8.9 A

Power Dissipation

2.5 W

Mounting Style

SMD/SMT

Gate Charge Qg

20 nC

Lead Free Status / RoHS Status

Lead free / RoHS Compliant

Other names

IRF7433PBFTR
IRF7433TRPBF
IRF7433TRPBFTR

Available stocks

Company

Part Number

Manufacturer

Quantity

Price

Company:

BOSTOCK HK LIMITED

Part Number:

IRF7433TRPBF

Manufacturer:

Company:

Meier Automation Equipment Co., Limited

Part Number:

IRF7433TRPBF

Manufacturer:

Quantity:

20 000

Current page: 1 of 9
Download datasheet (165Kb)

Thermal Resistance

These P-Channel MOSFETs from International

Rectifier utilize advanced processing techniques to

achieve the extremely low on-resistance per silicon

area. This benefit provides the designer with an

extremely efficient device for use in battery and load

management applications..

The SO-8 has been modified through a customized

leadframe for enhanced thermal characteristics and

multiple-die capability making it ideal in a variety of

power applications. With these improvements, multiple

devices can be used in an application with dramatically

reduced board space. The package is designed for

vapor phase, infrared, or wave soldering techniques.

Absolute Maximum Ratings

Description

www.irf.com

θJA

@ T

, T

Ultra Low On-Resistance

P-Channel MOSFET

Surface Mount

Available in Tape & Reel

Lead-Free

STG

= 25°C

= 70°C

= 25°C

= 70°C

Gate-to-Source Voltage

Linear Derating Factor

Drain-Source Voltage

Continuous Drain Current, V

Pulsed Drain Current

Maximum Power Dissipation

Junction and Storage Temperature Range

Maximum Junction-to-Ambient

Parameter

@ -4.5V

-12V

DSS

Top View

HEXFET

24mΩ@V

30mΩ@V

46mΩ@V

IRF7433PbF

-55 to +150

Max.

DS(on)

Max.

-8.9

-7.1

0.02

-12

-36

2.5

1.6

±8

Power MOSFET

max

= -4.5V

= -2.5V

= -1.8V

SO-8

PD - 95305

8.7A

7.4A

6.3A

Units

W/°C

°C/W

°C

10/12/04

Related parts for IRF7433TRPBF

IRF7433TRPBF Summary of contents

Page 1

Ultra Low On-Resistance l P-Channel MOSFET l Surface Mount l Available in Tape & Reel l Lead-Free l Description These P-Channel MOSFETs from International Rectifier utilize advanced processing techniques to achieve the extremely low on-resistance per silicon area. This benefit ...

Page 2

IRF7433PbF Electrical Characteristics @ T Parameter V Drain-to-Source Breakdown Voltage (BR)DSS ∆V Breakdown Voltage Temp. Coefficient /∆T (BR)DSS J R Static Drain-to-Source On-Resistance DS(on) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-to-Source Leakage Current DSS Gate-to-Source Forward ...

Page 3

PULSE WIDTH Tj = 25°C 0.1 0 Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics 100 ° 150 ° 20µs ...

Page 4

IRF7433PbF 3200 0V MHZ C iss = SHORTED 2800 C rss = C gd 2400 C oss = Ciss 2000 1600 ...

Page 5

T , Case Temperature ( C) C Fig 9. Maximum Drain Current Vs. Case Temperature 100 D = 0.50 0.20 10 0.10 0.05 0.02 1 0.01 SINGLE PULSE (THERMAL ...

Page 6

IRF7433PbF 0.050 0.040 0.030 -8.7A 0.020 0.010 0.0 2.0 4.0 6.0 -V GS, Gate -to -Source Voltage (V) Fig 12. Typical On-Resistance Vs. Gate Voltage Charge Fig ...

Page 7

Temperature ( °C ) Fig 15. Typical Vgs(th) Vs. Junction Temperature www.irf.com 300 200 -250µA 100 0 75 100 125 150 0.0001 0.0010 ...

Page 8

IRF7433PbF SO-8 Package Outline Dimensions are shown in milimeters (inches 0.25 [.010] NOT DIMENS IONING & T OLERANCING PER AS ME Y14.5M-1994. 2. CONT ROLLING DIMENS ...

Page 9

SO-8 Tape and Reel Dimensions are shown in milimeters (inches) NOTES: 1. CONTROLLING DIMENSION : MILLIMETER. 2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES). 3. OUTLINE CONFORMS TO EIA-481 & EIA-541. NOTES : 1. CONTROLLING DIMENSION : MILLIMETER. 2. OUTLINE CONFORMS ...

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