IRFR9120NPBF International Rectifier, IRFR9120NPBF Datasheet - Page 5

• Manufacturer Part Number: IRFR9120NPBF
• Description: MOSFET P-CH 100V 6.6A DPAK
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRFR9120NPBF

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 480 mOhm @ 3.9A, 10V
• Drain To Source Voltage (vdss): 100V
• Current - Continuous Drain (id) @ 25° C: 6.6A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 27nC @ 10V
• Input Capacitance (ciss) @ Vds: 350pF @ 25V
• Power - Max: 40W
• Mounting Type: Surface Mount
• Package / Case: DPak, TO-252 (2 leads+tab), SC-63
• Channel Type: P
• Current, Drain: -6.6 A
• Gate Charge, Total: 27 nC
• Package Type: D-Pak (TO-252AA)
• Polarization: P-Channel
• Power Dissipation: 40 W
• Resistance, Drain To Source On: 0.48 Ohm
• Temperature, Operating, Maximum: +150 °C
• Temperature, Operating, Minimum: -55 °C
• Time, Turn-off Delay: 28 ns
• Time, Turn-on Delay: 14 ns
• Transconductance, Forward: 1.4 S
• Voltage, Breakdown, Drain To Source: -100 V
• Voltage, Drain To Source: –100 V
• Voltage, Forward, Diode: -1.6 V
• Voltage, Gate To Source: ±20 V
• Configuration: Single
• Transistor Polarity: P-Channel
• Resistance Drain-source Rds (on): 480 m Ohms
• Drain-source Breakdown Voltage: - 100 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: - 6.5 A
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Fall Time: 31 ns
• Gate Charge Qg: 18 nC
• Minimum Operating Temperature: - 55 C
• Rise Time: 47 ns
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

8.0
6.0
4.0
2.0
0.0
0.01
0.1
10
0.00001
25
1
D = 0.50
0.20
0.10
0.05
0.02
0.01
50
T , Case Temperature ( C)
C
(THERMAL RESPONSE)
0.0001
75
SINGLE PULSE
100
0.001
125
t , Rectangular Pulse Duration (sec)
°
1
150
0.01
V
10%
90%
V
GS
DS
1. Duty factor D = t / t
2. Peak T = P
t
Notes:
d(on)
0.1
≤ 0.1 %
≤ 1
t
J
r
DM
x Z
1
thJC
P
2
DM
1
+ T
t
d(off)
C
t
1
t
2
t
f
+
-
10